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Артикул Производитель Серия Упаковка Тип Номинальный ток стока при 25 С Мощность не более Диапазон рабочих температур Способ монтажа Типоразмер Типоразмер корпуса в каталоге поставщика Особенности Напряжение СИ Сопротивление канала не более при токе стока и напряжении ЗИ Порогое напряжение ЗИ не более при токе стока Gate_Charge_Qg_Max__Vgs Input_Capacitance_Ciss_Max__Vds Жизненный цикл
Жизненный цикл
1095648 EPC2106ENGRT EPC eGaN® Tape & Reel (TR) 2 N-Channel (Half Bridge) 1.7A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 100V 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V Active
1096179 EPC2104ENG EPC eGaN® Tray 2 N-Channel (Half Bridge) 23A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 100V 6.3 mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V Discontinued
1096696 EPC2107ENGRT EPC eGaN® Tape & Reel (TR) 3 N-Channel (Half Bridge + Synchronous Bootstrap) 1.7A, 500mA - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 100V 320 mOhm @ 2A, 5V 2.5V @ 100µA 0.16nC @ 5V 16pF @ 50V Discontinued
1096699 EPC2110ENGRT EPC eGaN® Tape & Reel (TR) 2 N-Channel (Dual) Common Drain 3.4A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 120V 60 mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V Active
1096702 EPC2104ENGRT EPC eGaN® Tape & Reel (TR) 2 N-Channel (Half Bridge) 23A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 100V 6.3 mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V Active
1097361 EPC2103ENGRT EPC eGaN® Tape & Reel (TR) 2 N-Channel (Half Bridge) 23A - - Surface Mount Die Die GaNFET (Gallium Nitride) 80V 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 7600pF @ 40V Active
1097844 EPC2108ENGRT EPC eGaN® Tape & Reel (TR) 3 N-Channel (Half Bridge + Synchronous Bootstrap) 1.7A, 500mA - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V, 100V 190 mOhm @ 2.5A, 5V 2.5V @ 200µA 0.22nC @ 5V 22pF @ 30V Active
1099752 EPC2103ENG EPC eGaN® Tray 2 N-Channel (Half Bridge) 23A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 80V 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V Active
1100726 EPC2100ENG EPC eGaN® Tray 2 N-Channel (Half Bridge) 9.5A, 38A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 30V 8 mOhm @ 25A, 5V 2.5V @ 4mA 3.5nC @ 15V 380pF @ 15V Discontinued
1100727 EPC2101ENG EPC eGaN® Tray 2 N-Channel (Half Bridge) 9.5A, 38A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V 11.5 mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V Discontinued
1100728 EPC2105ENG EPC eGaN® Bulk 2 N-Channel (Half Bridge) 9.5A, 38A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 80V 14.5 mOhm @ 20A, 5V 2.5V @ 2.5mA 2.5nC @ 5V 300pF @ 40V Discontinued
1100763 EPC2102ENG EPC eGaN® Tray 2 N-Channel (Half Bridge) 23A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V 4.4 mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V Discontinued
1101376 EPC2101ENGRT EPC eGaN® Tape & Reel (TR) 2 N-Channel (Half Bridge) 9.5A, 38A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V 11.5 mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V Active
1101379 EPC2105ENGRT EPC eGaN® Tape & Reel (TR) 2 N-Channel (Half Bridge) 9.5A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 80V 14.5 mOhm @ 20A, 5V 2.5V @ 2.5mA 2.5nC @ 5V 300pF @ 40V Active
22490661 EPC2106 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 1.7A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 100V 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V Active
22490696 EPC2111 EPC - Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 16A (Ta) - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 30V 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V 2.5V @ 5mA 2.2nC @ 5V, 5.7nC @ 5V 230pF @ 15V, 590pF @ 15V Active
22490708 EPC2102 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 23A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V 4.4 mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V Active
22490711 EPC2103 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 28A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 80V 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V Active
22490714 EPC2104 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 23A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 100V 6.3 mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V Active
22491261 EPC2108 EPC eGaN® Tape & Reel (TR) Alternate Packaging 3 N-Channel (Half Bridge + Synchronous Bootstrap) 1.7A, 500mA - -40°C ~ 150°C (TJ) Surface Mount 9-VFBGA 9-BGA (1.35x1.35) GaNFET (Gallium Nitride) 60V, 100V 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.22nC @ 5V, 0.044nC @ 5V 22pF @ 30V, 7pF @ 30V Active
22491270 EPC2107 EPC eGaN® Tape & Reel (TR) Alternate Packaging 3 N-Channel (Half Bridge + Synchronous Bootstrap) 1.7A, 500mA - -40°C ~ 150°C (TJ) Surface Mount 9-VFBGA 9-BGA (1.35x1.35) GaNFET (Gallium Nitride) 100V 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.16nC @ 5V, 0.044nC @ 5V 16pF @ 50V, 7pF @ 50V Active
22491306 EPC2111ENGRT EPC - Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 16A (Ta) - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 30V 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V 2.5V @ 5mA 2.2nC @ 5V, 5.7nC @ 5V 230pF @ 15V, 590pF @ 15V Active
22491312 EPC2100 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 10A (Ta), 40A (Ta) - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 30V 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V 2.5V @ 4mA, 2.5V @ 16mA 4.9nC @ 15V, 19nC @ 15V 475pF @ 15V, 1960pF @ 15V Active
22491315 EPC2100ENGRT EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 10A (Ta), 40A (Ta) - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 30V 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V 2.5V @ 4mA, 2.5V @ 16mA 4.9nC @ 15V, 19nC @ 15V 475pF @ 15V, 1960pF @ 15V Active
22491318 EPC2102ENGRT EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 23A (Tj) - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V 4.4 mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V Active
22491321 EPC2101 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 9.5A, 38A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 60V 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V Active
22491324 EPC2105 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Half Bridge) 9.5A, 38A - -40°C ~ 150°C (TJ) Surface Mount Die Die GaNFET (Gallium Nitride) 80V 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V 2.5V @ 2.5mA, 2.5V @ 10mA 2.5nC @ 5V, 10nC @ 5V 300pF @ 40V, 1100pF @ 40V Active
22491936 EPC2110 EPC eGaN® Tape & Reel (TR) Alternate Packaging 2 N-Channel (Dual) Common Source 3.4A - -40°C ~ 150°C (TJ) - Die Die GaNFET (Gallium Nitride) 120V 60 mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V Active

© ООО «ОПТОЧИП», 2017-2024. Политика конфиденциальности. 125430, РФ, Москва, ул. Митинская, д.16