| Артикул | Производитель | Серия | Упаковка | Тип | Технология | Номинальный ток стока при 25 С | Диапазон рабочих температур | Способ монтажа | Типоразмер корпуса в каталоге поставщика | Типоразмер | Мощность не более | Напряжение СИ | Drive_Voltage_Max_Rds_On__Min_Rds_On | Порогое напряжение ЗИ не более при токе стока | Gate_Charge_Qg_Max__Vgs | Input_Capacitance_Ciss_Max__Vds | Vgs_Max | Особенности | Рассеиваемая мощность не более | Сопротивление канала не более при токе стока и напряжении ЗИ | Входная емкость при напряжении ЗИ | Жизненный цикл | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Жизненный цикл | |||||||||||||||||||||||
| 1176172 | IRFP4229PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 250V | 10V | 5V @ 250µA | 110nC @ 10V | 4560pF @ 25V | ±30V | - | 310W (Tc) | 46 mOhm @ 26A, 10V | Active | ||
| 1176173 | STL38N65M5 | STMicroelectronics | MDmesh™ V | Tape & Reel (TR) | N-Channel | MOSFET (Metal Oxide) | 3.5A (Ta), 22.5A (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 4-PowerFlat™ HV | 650V | 10V | 5V @ 250µA | 71nC @ 10V | 3000pF @ 100V | ±25V | - | 2.8W (Ta), 150W (Tc) | 105 mOhm @ 12.5A, 10V | Active | ||
| 1176176 | IRFP7530PBF | Infineon Technologies | HEXFET®, StrongIRFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 | 60V | 6V, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | ±20V | - | 341W (Tc) | 2 mOhm @ 100A, 10V | Active | ||
| 1176177 | IRFP3077PBF | Infineon Technologies | HEXFET® | Bulk | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 75V | 10V | 4V @ 250µA | 220nC @ 10V | 9400pF @ 50V | ±20V | - | 340W (Tc) | 3.3 mOhm @ 75A, 10V | Active | ||
| 1176178 | R6020ENZ1C9 | Rohm Semiconductor | - | Tube | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 600V | 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | ±20V | - | 120W (Tc) | 196 mOhm @ 9.5A, 10V | Active | ||
| 1176179 | IRFP244PBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 250V | 10V | 4V @ 250µA | 63nC @ 10V | 1400pF @ 25V | ±20V | - | 150W (Tc) | 280 mOhm @ 9A, 10V | Active | ||
| 1176180 | FDA032N08 | FairchildSemiconductor | PowerTrench® | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 | 75V | 10V | 4.5V @ 250µA | 220nC @ 10V | 15160pF @ 25V | ±20V | - | 375W (Tc) | 3.2 mOhm @ 75A, 10V | Active | ||
| 1176181 | SIHB22N60E-GE3 | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 600V | 10V | 4V @ 250µA | 86nC @ 10V | 1920pF @ 100V | ±30V | - | 227W (Tc) | 180 mOhm @ 11A, 10V | Active | ||
| 1176182 | IRFB4310PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 100V | 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | ±20V | - | 300W (Tc) | 7 mOhm @ 75A, 10V | Active | ||
| 1176183 | STP50NF25 | STMicroelectronics | STripFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 250V | 10V | 4V @ 250µA | 68.2nC @ 10V | 2670pF @ 25V | ±20V | - | 160W (Tc) | 69 mOhm @ 22A, 10V | Active | ||
| 1176184 | IRFS4127PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 72A (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 200V | 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | ±20V | - | 375W (Tc) | 22 mOhm @ 44A, 10V | Not For New Designs | ||
| 1176185 | IRFIB6N60APBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | 600V | 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | ±30V | - | 60W (Tc) | 750 mOhm @ 3.3A, 10V | Active | ||
| 1176186 | STF16N50M2 | STMicroelectronics | MDmesh™ | Tube | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack | 500V | 10V | 4V @ 250µA | 19.5nC @ 10V | 710pF @ 100V | ±25V | - | 25W (Tc) | 280 mOhm @ 6.5A, 10V | Active | ||
| 1176187 | IRF2804SPBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 40V | 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | ±20V | - | 300W (Tc) | 2 mOhm @ 75A, 10V | Not For New Designs | ||
| 1176188 | TK100A10N1,S4X | Toshiba Semiconductor andStorage | U-MOSVIII-H | Tube | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab | 100V | 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | ±20V | - | 45W (Tc) | 3.8 mOhm @ 50A, 10V | Active | ||
| 1176189 | IRFB3307PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 75V | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | - | 200W (Tc) | 6.3 mOhm @ 75A, 10V | Active | ||
| 1176190 | STF5N105K5 | STMicroelectronics | MDmesh™ | Tube | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack | 1050V (1.05kV) | 10V | 5V @ 100µA | 12.5nC @ 10V | 210pF @ 100V | ±30V | - | 25W (Tc) | 3.5 Ohm @ 1.5A, 10V | Active | ||
| 1176191 | IRFPG40PBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1000V (1kV) | 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | ±20V | - | 150W (Tc) | 3.5 Ohm @ 2.6A, 10V | Active | ||
| 1176192 | STI24NM60N | STMicroelectronics | MDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | 600V | 10V | 4V @ 250µA | 46nC @ 10V | 1400pF @ 50V | ±30V | - | 125W (Tc) | 190 mOhm @ 8A, 10V | Active | ||
| 1176193 | IXFH16N50P | IXYS | HiPerFET™, PolarHT™ | Tube | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 | 500V | 10V | 5.5V @ 2.5mA | 43nC @ 10V | 2250pF @ 25V | ±30V | - | 300W (Tc) | 400 mOhm @ 8A, 10V | Active | ||
| 1176194 | IRFP360LCPBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 400V | 10V | 4V @ 250µA | 110nC @ 10V | 3400pF @ 25V | ±30V | - | 280W (Tc) | 200 mOhm @ 14A, 10V | Active | ||
| 1176195 | IRFI4110GPBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 72A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack | 100V | 10V | 4V @ 250µA | 290nC @ 10V | 9540pF @ 50V | ±20V | - | 61W (Tc) | 4.5 mOhm @ 43A, 10V | Active | ||
| 1176196 | IRFBC40LCPBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 600V | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 125W (Tc) | 1.2 Ohm @ 3.7A, 10V | Active | ||
| 1176197 | SPP20N60C3XKSA1 | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 20.7A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 | 600V | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | Active | ||
| 1176198 | SPA20N60C3XKSA1 | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 20.7A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack | 600V | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 34.5W (Tc) | 190 mOhm @ 13.1A, 10V | Active | ||
| 1176199 | IRFB3207PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 75V | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | - | 330W (Tc) | 4.5 mOhm @ 75A, 10V | Active | ||
| 1176200 | SIHG22N60E-E3 | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 600V | 10V | 4V @ 250µA | 86nC @ 10V | 1920pF @ 100V | ±30V | - | 227W (Tc) | 180 mOhm @ 11A, 10V | Active | ||
| 1176201 | STP16N65M5 | STMicroelectronics | MDmesh™ V | Tube | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 650V | 10V | 5V @ 250µA | 45nC @ 10V | 1250pF @ 100V | ±25V | - | 90W (Tc) | 299 mOhm @ 6A, 10V | Active | ||
| 1176202 | IXTQ180N10T | IXYS | TrenchMV™ | Tube | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 | 100V | 10V | 4.5V @ 250µA | 151nC @ 10V | 6900pF @ 25V | ±30V | - | 480W (Tc) | 6.4 mOhm @ 25A, 10V | Active | ||
| 1176203 | FDPF2710T | FairchildSemiconductor | PowerTrench® | Tube | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack | 250V | 10V | 5V @ 250µA | 101nC @ 10V | 7280pF @ 25V | ±30V | - | 62.5W (Tc) | 42.5 mOhm @ 25A, 10V | Active | ||
| 1176204 | IRFS3107PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 75V | 10V | 4V @ 250µA | 240nC @ 10V | 9370pF @ 50V | ±20V | - | 370W (Tc) | 3 mOhm @ 140A, 10V | Not For New Designs | ||
| 1176205 | IRFP7430PBF | Infineon Technologies | HEXFET®, StrongIRFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 40V | 6V, 10V | 3.9V @ 250µA | 460nC @ 10V | 14240pF @ 25V | ±20V | - | 366W (Tc) | 1.3 mOhm @ 100A, 10V | Active | ||
| 1176206 | STP7N95K3 | STMicroelectronics | SuperMESH3™ | Tube | N-Channel | MOSFET (Metal Oxide) | 7.2A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 950V | 10V | 5V @ 100µA | 34nC @ 10V | 1031pF @ 100V | ±30V | - | 150W (Tc) | 1.35 Ohm @ 3.6A, 10V | Active | ||
| 1176207 | STW10N95K5 | STMicroelectronics | SuperMESH5™ | Tube | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 950V | 10V | 5V @ 100µA | 22nC @ 10V | 630pF @ 100V | ±30V | - | 130W (Tc) | 800 mOhm @ 4A, 10V | Active | ||
| 1176208 | IPW60R125C6 | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 600V | 10V | 3.5V @ 960µA | 96nC @ 10V | 2127pF @ 100V | ±20V | - | 219W (Tc) | 125 mOhm @ 14.5A, 10V | Active | ||
| 1176209 | STB32N65M5 | STMicroelectronics | MDmesh™ V | Tape & Reel (TR) | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650V | 10V | 5V @ 250µA | 72nC @ 10V | 3320pF @ 100V | ±25V | - | 150W (Tc) | 119 mOhm @ 12A, 10V | Active | ||
| 1176212 | IPP023NE7N3 G | Infineon Technologies | OptiMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 | 75V | 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | ±20V | - | 300W (Tc) | 2.3 mOhm @ 100A, 10V | Obsolete | ||
| 1176213 | AOK27S60L | Alpha & Omega Semiconductor Inc. | aMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 600V | 10V | 4V @ 250µA | 26nC @ 10V | 1294pF @ 100V | ±30V | - | 357W (Tc) | 160 mOhm @ 13.5A, 10V | Active | ||
| 1176214 | FDA28N50 | FairchildSemiconductor | UniFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 | 500V | 10V | 5V @ 250µA | 105nC @ 10V | 5140pF @ 25V | ±30V | - | 310W (Tc) | 155 mOhm @ 14A, 10V | Active | ||
| 1176215 | IPP030N10N3GXKSA1 | Infineon Technologies | OptiMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 | 100V | 6V, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | ±20V | - | 300W (Tc) | 3 mOhm @ 100A, 10V | Active | ||
| 1176216 | STF32NM50N | STMicroelectronics | MDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | 500V | 10V | 4V @ 250µA | 62.5nC @ 10V | 1973pF @ 50V | ±25V | - | 35W (Tc) | 130 mOhm @ 11A, 10V | Active | ||
| 1176217 | IPP075N15N3GXKSA1 | Infineon Technologies | OptiMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 | 150V | 8V, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | ±20V | - | 300W (Tc) | 7.5 mOhm @ 100A, 10V | Active | ||
| 1176218 | SIHG32N50D-GE3 | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 500V | 10V | 5V @ 250µA | 96nC @ 10V | 2550pF @ 100V | ±30V | - | 390W (Tc) | 150 mOhm @ 16A, 10V | Active | ||
| 1176219 | STW18N65M5 | STMicroelectronics | MDmesh™ V | Tube | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 650V | 10V | 5V @ 250µA | 31nC @ 10V | 1240pF @ 100V | ±25V | - | 110W (Tc) | 220 mOhm @ 7.5A, 10V | Active | ||
| 1176220 | IPA60R099P6XKSA1 | Infineon Technologies | CoolMOS™ P6 | Tube | N-Channel | MOSFET (Metal Oxide) | 37.9A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack | 600V | 10V | 4.5V @ 1.21mA | 70nC @ 10V | 3330pF @ 100V | ±20V | - | 34W (Tc) | 99 mOhm @ 14.5A, 10V | Active | ||
| 1176221 | IRFS3006-7PPBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 240A (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | 60V | 10V | 4V @ 250µA | 300nC @ 10V | 8850pF @ 50V | ±20V | - | 375W (Tc) | 2.1 mOhm @ 168A, 10V | Not For New Designs | ||
| 1176222 | IPP023N10N5AKSA1 | Infineon Technologies | OptiMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 | 100V | 6V, 10V | 3.8V @ 270µA | 210nC @ 10V | 15600pF @ 50V | ±20V | - | 375W (Tc) | 2.3 mOhm @ 100A, 10V | Active | ||
| 1176223 | FQA30N40 | FairchildSemiconductor | QFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 | 400V | 10V | 5V @ 250µA | 120nC @ 10V | 4400pF @ 25V | ±30V | - | 290W (Tc) | 140 mOhm @ 15A, 10V | Active | ||
| 1176224 | STP360N4F6 | STMicroelectronics | DeepGATE™, STripFET™ VI | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 | 40V | 10V | 4.5V @ 250µA | 340nC @ 10V | 17930pF @ 25V | ±20V | - | 300W (Tc) | 1.8 mOhm @ 60A, 10V | Obsolete | ||
| 1176225 | FCP22N60N | FairchildSemiconductor | SupreMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 600V | 10V | 4V @ 250µA | 45nC @ 10V | 1950pF @ 100V | ±45V | - | 205W (Tc) | 165 mOhm @ 11A, 10V | Active | ||
| 1176226 | IXTA36P15P | IXYS | PolarP™ | Tube | P-Channel | MOSFET (Metal Oxide) | 36A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 150V | 10V | 4.5V @ 250µA | 55nC @ 10V | 3100pF @ 25V | ±20V | - | 300W (Tc) | 110 mOhm @ 18A, 10V | Active | ||
| 1176227 | IRFPC60LCPBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 600V | 10V | 4V @ 250µA | 120nC @ 10V | 3500pF @ 25V | ±30V | - | 280W (Tc) | 400 mOhm @ 9.6A, 10V | Active | ||
| 1176228 | IXTQ52N30P | IXYS | PolarHT™ | Tube | N-Channel | MOSFET (Metal Oxide) | 52A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 | 300V | 10V | 5V @ 250µA | 110nC @ 10V | 3490pF @ 25V | ±20V | - | 400W (Tc) | 66 mOhm @ 26A, 10V | Active | ||
| 1176229 | FDP036N10A | FairchildSemiconductor | PowerTrench® | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 100V | 10V | 4V @ 250µA | 116nC @ 10V | 7295pF @ 25V | ±20V | - | 333W (Tc) | 3.6 mOhm @ 75A, 10V | Active | ||
| 1176230 | IRLP3034PBF | Infineon Technologies | HEXFET® | Tube | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 40V | 4.5V, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | ±20V | - | 341W (Tc) | 1.7 mOhm @ 195A, 10V | Active | ||
| 1176231 | IXTQ44P15T | IXYS | TrenchP™ | Tube | P-Channel | MOSFET (Metal Oxide) | 44A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 | 150V | 10V | 4V @ 250µA | 175nC @ 10V | 13400pF @ 25V | ±15V | - | 298W (Tc) | 65 mOhm @ 500mA, 10V | Active | ||
| 1176232 | STW15N80K5 | STMicroelectronics | SuperMESH5™ | Tube | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 800V | 10V | 5V @ 100µA | 32nC @ 10V | 1100pF @ 100V | ±30V | - | 190W (Tc) | 375 mOhm @ 7A, 10V | Active | ||
| 1176233 | STW19NM50N | STMicroelectronics | MDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 500V | 10V | 4V @ 250µA | 34nC @ 10V | 1000pF @ 50V | ±25V | - | 110W (Tc) | 250 mOhm @ 7A, 10V | Active | ||
| 1176234 | SPW24N60C3 | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 24.3A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 650V | 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | ±20V | - | 240W (Tc) | 160 mOhm @ 15.4A, 10V | Active | ||
| 1176235 | FCH104N60F | FairchildSemiconductor | HiPerFET™, Polar™ | Tube | N-Channel | MOSFET (Metal Oxide) | 37A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 600V | 10V | 5V @ 250µA | 139nC @ 10V | 5950pF @ 100V | ±20V | - | 357W (Tc) | 104 mOhm @ 18.5A, 10V | Active | ||
| 1176236 | TK100E08N1,S1X | Toshiba Semiconductor andStorage | U-MOSVIII-H | Tube | N-Channel | MOSFET (Metal Oxide) | 100A (Ta) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | 80V | 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | ±20V | - | 255W (Tc) | 3.2 mOhm @ 50A, 10V | Active | ||
| 1176237 | IRFPC60PBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 600V | 10V | 4V @ 250µA | 210nC @ 10V | 3900pF @ 25V | ±20V | - | 280W (Tc) | 400 mOhm @ 9.6A, 10V | Active | ||
| 1176238 | R6025ANZC8 | Rohm Semiconductor | - | Tube | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack | 600V | 10V | 4.5V @ 1mA | 88nC @ 10V | 3250pF @ 10V | ±20V | - | 150W (Tc) | 150 mOhm @ 12.5A, 10V | Not For New Designs | ||
| 1176239 | IPW60R099P6XKSA1 | Infineon Technologies | CoolMOS™ P6 | Tube | N-Channel | MOSFET (Metal Oxide) | 37.9A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 600V | 10V | 4.5V @ 1.21mA | 70nC @ 10V | 3330pF @ 100V | ±20V | - | 278W (Tc) | 99 mOhm @ 14.5A, 10V | Active | ||
| 1176240 | STP24NM60N | STMicroelectronics | MDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | 600V | 10V | 4V @ 250µA | 46nC @ 10V | 1400pF @ 50V | ±30V | - | 125W (Tc) | 190 mOhm @ 8A, 10V | Active | ||
| 1176241 | FDA28N50F | FairchildSemiconductor | UniFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 | 500V | 10V | 5V @ 250µA | 105nC @ 10V | 5387pF @ 25V | ±30V | - | 310W (Tc) | 175 mOhm @ 14A, 10V | Active | ||
| 1176242 | STF21N65M5 | STMicroelectronics | MDmesh™ V | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | 650V | 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | ±25V | - | 30W (Tc) | 190 mOhm @ 8.5A, 10V | Active | ||
| 1176243 | STF24N60M2 | STMicroelectronics | MDmesh™ II Plus | Tube | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | 600V | 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | ±25V | - | 30W (Tc) | 190 mOhm @ 9A, 10V | Active | ||
| 1176244 | STP21NM60ND | STMicroelectronics | FDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 600V | 10V | 5V @ 250µA | 60nC @ 10V | 1800pF @ 50V | ±25V | - | 140W (Tc) | 220 mOhm @ 8.5A, 10V | Active | ||
| 1176245 | STW21NM60ND | STMicroelectronics | FDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 600V | 10V | 5V @ 250µA | 60nC @ 10V | 1800pF @ 50V | ±25V | - | 140W (Tc) | 220 mOhm @ 8.5A, 10V | Active | ||
| 1176246 | IPP60R099C7XKSA1 | Infineon Technologies | CoolMOS™ C7 | Tube | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 | 600V | 10V | 4V @ 490µA | 42nC @ 10V | 1819pF @ 400V | ±20V | - | 110W (Tc) | 99 mOhm @ 9.7A, 10V | Active | ||
| 1176247 | STW18NM80 | STMicroelectronics | MDmesh™ | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 800V | 10V | 5V @ 250µA | 70nC @ 10V | 2070pF @ 50V | ±30V | - | 190W (Tc) | 295 mOhm @ 8.5A, 10V | Active | ||
| 1176248 | APT8M100B | Microsemi SoC | - | Tube | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 1000V (1kV) | 10V | 5V @ 1mA | 60nC @ 10V | 1885pF @ 25V | ±30V | - | 290W (Tc) | 1.8 Ohm @ 4A, 10V | Active | ||
| 1176249 | SIHP33N60EF-GE3 | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 600V | 10V | 4V @ 250µA | 155nC @ 10V | 3454pF @ 100V | ±30V | - | 278W (Tc) | 98 mOhm @ 16.5A, 10V | Active | ||
| 1176250 | STP185N55F3 | STMicroelectronics | STripFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 55V | 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | ±20V | - | 330W (Tc) | 3.8 mOhm @ 60A, 10V | Active | ||
| 1176251 | IPW90R340C3 | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 900V | 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | ±20V | - | 208W (Tc) | 340 mOhm @ 9.2A, 10V | Active | ||
| 1176252 | IPW60R125CP | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 600V | 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | ±20V | - | 208W (Tc) | 125 mOhm @ 16A, 10V | Active | ||
| 1176253 | TK15J60U(F) | Toshiba Semiconductor andStorage | DTMOSII | Tube | N-Channel | MOSFET (Metal Oxide) | 15A (Ta) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 | 600V | 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | ±30V | - | 170W (Tc) | 300 mOhm @ 7.5A, 10V | Active | ||
| 1176254 | IRFP350LCPBF | Vishay Siliconix | - | Tube | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 400V | - | 4V @ 250µA | 76nC @ 10V | 2200pF @ 25V | - | - | 190W (Tc) | 300 mOhm @ 9.6A, 10V | Active | ||
| 1176255 | STP23NM60ND | STMicroelectronics | FDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 19.5A (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 600V | 10V | 5V @ 250µA | 69nC @ 10V | 2100pF @ 50V | ±25V | - | 150W (Tc) | 180 mOhm @ 10A, 10V | Active | ||
| 1176257 | IXTH26N60P | IXYS | PolarHV™ | Tube | N-Channel | MOSFET (Metal Oxide) | 26A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 | 600V | 10V | 5V @ 250µA | 72nC @ 10V | 4150pF @ 25V | ±30V | - | 460W (Tc) | 270 mOhm @ 500mA, 10V | Active | ||
| 1176258 | STP18NM80 | STMicroelectronics | MDmesh™ | Tube | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 800V | 10V | 5V @ 250µA | 70nC @ 10V | 2070pF @ 50V | ±30V | - | 190W (Tc) | 295 mOhm @ 8.5A, 10V | Active | ||
| 1176259 | HUF75652G3 | FairchildSemiconductor | UltraFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 | 100V | 10V | 4V @ 250µA | 475nC @ 20V | 7585pF @ 25V | ±20V | - | 515W (Tc) | 8 mOhm @ 75A, 10V | Active | ||
| 1176260 | IPW60R099C7XKSA1 | Infineon Technologies | CoolMOS™ C7 | Tube | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 600V | 10V | 4V @ 490µA | 42nC @ 10V | 1819pF @ 400V | ±20V | - | 110W (Tc) | 99 mOhm @ 9.7A, 10V | Active | ||
| 1176261 | STP400N4F6 | STMicroelectronics | DeepGATE™, STripFET™ VI | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 | 40V | 10V | 4.5V @ 250µA | 377nC @ 10V | 20000pF @ 25V | ±20V | - | 300W (Tc) | 1.7 mOhm @ 60A, 10V | Obsolete | ||
| 1176262 | STW23N85K5 | STMicroelectronics | SuperMESH5™ | Tube | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 850V | 10V | 5V @ 100µA | 38nC @ 10V | 1650pF @ 100V | ±30V | - | 250W (Tc) | 275 mOhm @ 9.5A, 10V | Active | ||
| 1176263 | IXTH10P50P | IXYS | PolarP™ | Tube | P-Channel | MOSFET (Metal Oxide) | 10A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 | 500V | 10V | 4V @ 250µA | 50nC @ 10V | 2840pF @ 25V | ±20V | - | 300W (Tc) | 1 Ohm @ 5A, 10V | Active | ||
| 1176264 | STP190N55LF3 | STMicroelectronics | STripFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 55V | 5V, 10V | 2.5V @ 250µA | 80nC @ 5V | 6200pF @ 25V | ±18V | - | 312W (Tc) | 3.7 mOhm @ 30A, 10V | Active | ||
| 1176265 | STF26NM60N | STMicroelectronics | MDmesh™ II | Tube | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | 600V | 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | ±30V | - | 35W (Tc) | 165 mOhm @ 10A, 10V | Active | ||
| 1176266 | APT30F50B | Microsemi SoC | POWER MOS 8™ | Tube | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 500V | 10V | 5V @ 1mA | 115nC @ 10V | 4525pF @ 25V | ±30V | - | 415W (Tc) | 190 mOhm @ 14A, 10V | Active | ||
| 1176267 | APT24F50B | Microsemi SoC | POWER MOS 8™ | Tube | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 | 500V | 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | ±30V | - | 335W (Tc) | 240 mOhm @ 11A, 10V | Active | ||
| 1176268 | IXTH8P50 | IXYS | - | Tube | P-Channel | MOSFET (Metal Oxide) | 8A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 | 500V | 10V | 5V @ 250µA | 130nC @ 10V | 3400pF @ 25V | ±20V | - | 180W (Tc) | 1.2 Ohm @ 4A, 10V | Active | ||
| 1176269 | IXFP3N120 | IXYS | HiPerFET™ | Tube | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 1200V (1.2kV) | 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | ±20V | - | 200W (Tc) | 4.5 Ohm @ 500mA, 10V | Active | ||
| 1176270 | EPC2018 | EPC | eGaN® | Tape & Reel (TR) | N-Channel | GaNFET (Gallium Nitride) | 12A (Ta) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | 150V | 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | +6V, -5V | - | - | 25 mOhm @ 6A, 5V | Last Time Buy | ||
| 1176273 | STW22N95K5 | STMicroelectronics | SuperMESH5™ | Tube | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 | 950V | 10V | 5V @ 100µA | 48nC @ 10V | 1550pF @ 100V | ±30V | - | 250W (Tc) | 330 mOhm @ 9A, 10V | Active | ||
| 1176274 | SPW32N50C3FKSA1 | Infineon Technologies | CoolMOS™ | Tube | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | 560V | 10V | 3.9V @ 1.8mA | 170nC @ 10V | 4200pF @ 25V | ±20V | - | 284W (Tc) | 110 mOhm @ 20A, 10V | Active | ||
| 1176275 | IRFP4868PBF | Infineon Technologies | - | Tube | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | 300V | 10V | 5V @ 250µA | 270nC @ 10V | 10774pF @ 50V | ±20V | - | 517W (Tc) | 32 mOhm @ 42A, 10V | Active | ||
| 1176276 | STP270N8F7 | STMicroelectronics | DeepGATE™, STripFET™ VII | Tube | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 | 80V | 10V | 4V @ 250µA | 193nC @ 10V | 13600pF @ 50V | ±20V | - | 315W (Tc) | 2.5 mOhm @ 90A, 10V | Active | ||
| 1176277 | R5016FNX | Rohm Semiconductor | - | Bulk | N-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack | 500V | 10V | 5V @ 1mA | 46nC @ 10V | 1700pF @ 25V | ±30V | - | 50W (Tc) | 325 mOhm @ 8A, 10V | Active | ||
| 1176278 | IXTH110N25T | IXYS | - | Tube | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 | 250V | 10V | 4.5V @ 1mA | 157nC @ 10V | 9400pF @ 25V | ±20V | - | 694W (Tc) | 24 mOhm @ 55A, 10V | Active |
