-
Components
-
Полупроводники / Диоды, транзисторы, тиристоры / Транзисторы / Полевые транзисторы, MOSFET, JFET / Одиночные силовые полевые МОП-транзисторы (MOSFET)
Compare
|
Manufacturer Part Number |
Manufacturer |
Series |
Packaging |
FET Type |
Technology |
Current Continuous Drain Id 25C |
Operating Temperature |
Mounting Type |
Supplier Device Package |
Package Case |
Power Max |
Drain to Source Voltage Vdss |
Drive Voltage Max Rds On Min Rds On |
Vgsth Max Id |
Gate Charge Qg Max Vgs |
Input Capacitance Ciss Max Vds |
Vgs Max |
FET Feature |
Power Dissipation Max |
Rds On Max Id Vgs |
Input Capacitance Ciss Vds |
Lifecycle |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Lifecycle |
1176172 |
IRFP4229PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
44A (Tc) |
-40°C ~ 175°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
250V |
10V |
5V @ 250µA |
110nC @ 10V |
4560pF @ 25V |
±30V |
- |
310W (Tc) |
46 mOhm @ 26A, 10V |
|
Active |
1176173 |
STL38N65M5 |
STMicroelectronics |
MDmesh™ V |
Tape & Reel (TR) |
N-Channel |
MOSFET (Metal Oxide) |
3.5A (Ta), 22.5A (Tc) |
150°C (TJ) |
Surface Mount |
PowerFlat™ (8x8) HV |
4-PowerFlat™ HV |
|
650V |
10V |
5V @ 250µA |
71nC @ 10V |
3000pF @ 100V |
±25V |
- |
2.8W (Ta), 150W (Tc) |
105 mOhm @ 12.5A, 10V |
|
Active |
1176176 |
IRFP7530PBF |
Infineon Technologies |
HEXFET®, StrongIRFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
195A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
60V |
6V, 10V |
3.7V @ 250µA |
411nC @ 10V |
13703pF @ 25V |
±20V |
- |
341W (Tc) |
2 mOhm @ 100A, 10V |
|
Active |
1176177 |
IRFP3077PBF |
Infineon Technologies |
HEXFET® |
Bulk |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
75V |
10V |
4V @ 250µA |
220nC @ 10V |
9400pF @ 50V |
±20V |
- |
340W (Tc) |
3.3 mOhm @ 75A, 10V |
|
Active |
1176178 |
R6020ENZ1C9 |
Rohm Semiconductor |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
20A (Tc) |
150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
600V |
10V |
4V @ 1mA |
60nC @ 10V |
1400pF @ 25V |
±20V |
- |
120W (Tc) |
196 mOhm @ 9.5A, 10V |
|
Active |
1176179 |
IRFP244PBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
15A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
250V |
10V |
4V @ 250µA |
63nC @ 10V |
1400pF @ 25V |
±20V |
- |
150W (Tc) |
280 mOhm @ 9A, 10V |
|
Active |
1176180 |
FDA032N08 |
FairchildSemiconductor |
PowerTrench® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-3PN |
TO-3P-3, SC-65-3 |
|
75V |
10V |
4.5V @ 250µA |
220nC @ 10V |
15160pF @ 25V |
±20V |
- |
375W (Tc) |
3.2 mOhm @ 75A, 10V |
|
Active |
1176181 |
SIHB22N60E-GE3 |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
21A (Tc) |
-55°C ~ 150°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
600V |
10V |
4V @ 250µA |
86nC @ 10V |
1920pF @ 100V |
±30V |
- |
227W (Tc) |
180 mOhm @ 11A, 10V |
|
Active |
1176182 |
IRFB4310PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
130A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
100V |
10V |
4V @ 250µA |
250nC @ 10V |
7670pF @ 50V |
±20V |
- |
300W (Tc) |
7 mOhm @ 75A, 10V |
|
Active |
1176183 |
STP50NF25 |
STMicroelectronics |
STripFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
45A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
250V |
10V |
4V @ 250µA |
68.2nC @ 10V |
2670pF @ 25V |
±20V |
- |
160W (Tc) |
69 mOhm @ 22A, 10V |
|
Active |
1176184 |
IRFS4127PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
72A (Tc) |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
200V |
10V |
5V @ 250µA |
150nC @ 10V |
5380pF @ 50V |
±20V |
- |
375W (Tc) |
22 mOhm @ 44A, 10V |
|
Not For New Designs |
1176185 |
IRFIB6N60APBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
5.5A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 Full Pack, Isolated Tab |
|
600V |
10V |
4V @ 250µA |
49nC @ 10V |
1400pF @ 25V |
±30V |
- |
60W (Tc) |
750 mOhm @ 3.3A, 10V |
|
Active |
1176186 |
STF16N50M2 |
STMicroelectronics |
MDmesh™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
13A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220 Full Pack |
TO-220-3 Full Pack |
|
500V |
10V |
4V @ 250µA |
19.5nC @ 10V |
710pF @ 100V |
±25V |
- |
25W (Tc) |
280 mOhm @ 6.5A, 10V |
|
Active |
1176187 |
IRF2804SPBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
75A (Tc) |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
40V |
10V |
4V @ 250µA |
240nC @ 10V |
6450pF @ 25V |
±20V |
- |
300W (Tc) |
2 mOhm @ 75A, 10V |
|
Not For New Designs |
1176188 |
TK100A10N1,S4X |
Toshiba Semiconductor andStorage |
U-MOSVIII-H |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
100A (Tc) |
150°C (TJ) |
Through Hole |
TO-220SIS |
TO-220-3 Full Pack, Isolated Tab |
|
100V |
10V |
4V @ 1mA |
140nC @ 10V |
8800pF @ 50V |
±20V |
- |
45W (Tc) |
3.8 mOhm @ 50A, 10V |
|
Active |
1176189 |
IRFB3307PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
130A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
75V |
10V |
4V @ 150µA |
180nC @ 10V |
5150pF @ 50V |
±20V |
- |
200W (Tc) |
6.3 mOhm @ 75A, 10V |
|
Active |
1176190 |
STF5N105K5 |
STMicroelectronics |
MDmesh™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
3A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220 Full Pack |
TO-220-3 Full Pack |
|
1050V (1.05kV) |
10V |
5V @ 100µA |
12.5nC @ 10V |
210pF @ 100V |
±30V |
- |
25W (Tc) |
3.5 Ohm @ 1.5A, 10V |
|
Active |
1176191 |
IRFPG40PBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
4.3A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
1000V (1kV) |
10V |
4V @ 250µA |
120nC @ 10V |
1600pF @ 25V |
±20V |
- |
150W (Tc) |
3.5 Ohm @ 2.6A, 10V |
|
Active |
1176192 |
STI24NM60N |
STMicroelectronics |
MDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
I2PAK |
TO-262-3 Long Leads, I²Pak, TO-262AA |
|
600V |
10V |
4V @ 250µA |
46nC @ 10V |
1400pF @ 50V |
±30V |
- |
125W (Tc) |
190 mOhm @ 8A, 10V |
|
Active |
1176193 |
IXFH16N50P |
IXYS |
HiPerFET™, PolarHT™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
16A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247AD (IXFH) |
TO-247-3 |
|
500V |
10V |
5.5V @ 2.5mA |
43nC @ 10V |
2250pF @ 25V |
±30V |
- |
300W (Tc) |
400 mOhm @ 8A, 10V |
|
Active |
1176194 |
IRFP360LCPBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
23A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
400V |
10V |
4V @ 250µA |
110nC @ 10V |
3400pF @ 25V |
±30V |
- |
280W (Tc) |
200 mOhm @ 14A, 10V |
|
Active |
1176195 |
IRFI4110GPBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
72A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB Full-Pak |
TO-220-3 Full Pack |
|
100V |
10V |
4V @ 250µA |
290nC @ 10V |
9540pF @ 50V |
±20V |
- |
61W (Tc) |
4.5 mOhm @ 43A, 10V |
|
Active |
1176196 |
IRFBC40LCPBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
6.2A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
600V |
10V |
4V @ 250µA |
39nC @ 10V |
1100pF @ 25V |
±30V |
- |
125W (Tc) |
1.2 Ohm @ 3.7A, 10V |
|
Active |
1176197 |
SPP20N60C3XKSA1 |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
20.7A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO220-3-1 |
TO-220-3 |
|
600V |
10V |
3.9V @ 1mA |
114nC @ 10V |
2400pF @ 25V |
±20V |
- |
208W (Tc) |
190 mOhm @ 13.1A, 10V |
|
Active |
1176198 |
SPA20N60C3XKSA1 |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
20.7A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO220-3-31 Full Pack |
TO-220-3 Full Pack |
|
600V |
10V |
3.9V @ 1mA |
114nC @ 10V |
2400pF @ 25V |
±20V |
- |
34.5W (Tc) |
190 mOhm @ 13.1A, 10V |
|
Active |
1176199 |
IRFB3207PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
170A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
75V |
10V |
4V @ 250µA |
260nC @ 10V |
7600pF @ 50V |
±20V |
- |
330W (Tc) |
4.5 mOhm @ 75A, 10V |
|
Active |
1176200 |
SIHG22N60E-E3 |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
21A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
600V |
10V |
4V @ 250µA |
86nC @ 10V |
1920pF @ 100V |
±30V |
- |
227W (Tc) |
180 mOhm @ 11A, 10V |
|
Active |
1176201 |
STP16N65M5 |
STMicroelectronics |
MDmesh™ V |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
12A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
|
650V |
10V |
5V @ 250µA |
45nC @ 10V |
1250pF @ 100V |
±25V |
- |
90W (Tc) |
299 mOhm @ 6A, 10V |
|
Active |
1176202 |
IXTQ180N10T |
IXYS |
TrenchMV™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
180A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-3P |
TO-3P-3, SC-65-3 |
|
100V |
10V |
4.5V @ 250µA |
151nC @ 10V |
6900pF @ 25V |
±30V |
- |
480W (Tc) |
6.4 mOhm @ 25A, 10V |
|
Active |
1176203 |
FDPF2710T |
FairchildSemiconductor |
PowerTrench® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
25A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220F |
TO-220-3 Full Pack |
|
250V |
10V |
5V @ 250µA |
101nC @ 10V |
7280pF @ 25V |
±30V |
- |
62.5W (Tc) |
42.5 mOhm @ 25A, 10V |
|
Active |
1176204 |
IRFS3107PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
195A (Tc) |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
75V |
10V |
4V @ 250µA |
240nC @ 10V |
9370pF @ 50V |
±20V |
- |
370W (Tc) |
3 mOhm @ 140A, 10V |
|
Not For New Designs |
1176205 |
IRFP7430PBF |
Infineon Technologies |
HEXFET®, StrongIRFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
195A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
40V |
6V, 10V |
3.9V @ 250µA |
460nC @ 10V |
14240pF @ 25V |
±20V |
- |
366W (Tc) |
1.3 mOhm @ 100A, 10V |
|
Active |
1176206 |
STP7N95K3 |
STMicroelectronics |
SuperMESH3™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
7.2A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
|
950V |
10V |
5V @ 100µA |
34nC @ 10V |
1031pF @ 100V |
±30V |
- |
150W (Tc) |
1.35 Ohm @ 3.6A, 10V |
|
Active |
1176207 |
STW10N95K5 |
STMicroelectronics |
SuperMESH5™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
8A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
950V |
10V |
5V @ 100µA |
22nC @ 10V |
630pF @ 100V |
±30V |
- |
130W (Tc) |
800 mOhm @ 4A, 10V |
|
Active |
1176208 |
IPW60R125C6 |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
30A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
600V |
10V |
3.5V @ 960µA |
96nC @ 10V |
2127pF @ 100V |
±20V |
- |
219W (Tc) |
125 mOhm @ 14.5A, 10V |
|
Active |
1176209 |
STB32N65M5 |
STMicroelectronics |
MDmesh™ V |
Tape & Reel (TR) |
N-Channel |
MOSFET (Metal Oxide) |
24A (Tc) |
150°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
650V |
10V |
5V @ 250µA |
72nC @ 10V |
3320pF @ 100V |
±25V |
- |
150W (Tc) |
119 mOhm @ 12A, 10V |
|
Active |
1176212 |
IPP023NE7N3 G |
Infineon Technologies |
OptiMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO220-3-1 |
TO-220-3 |
|
75V |
10V |
3.8V @ 273µA |
206nC @ 10V |
14400pF @ 37.5V |
±20V |
- |
300W (Tc) |
2.3 mOhm @ 100A, 10V |
|
Obsolete |
1176213 |
AOK27S60L |
Alpha & Omega Semiconductor Inc. |
aMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
27A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
600V |
10V |
4V @ 250µA |
26nC @ 10V |
1294pF @ 100V |
±30V |
- |
357W (Tc) |
160 mOhm @ 13.5A, 10V |
|
Active |
1176214 |
FDA28N50 |
FairchildSemiconductor |
UniFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
28A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3PN |
TO-3P-3, SC-65-3 |
|
500V |
10V |
5V @ 250µA |
105nC @ 10V |
5140pF @ 25V |
±30V |
- |
310W (Tc) |
155 mOhm @ 14A, 10V |
|
Active |
1176215 |
IPP030N10N3GXKSA1 |
Infineon Technologies |
OptiMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
100A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO-220-3 |
TO-220-3 |
|
100V |
6V, 10V |
3.5V @ 275µA |
206nC @ 10V |
14800pF @ 50V |
±20V |
- |
300W (Tc) |
3 mOhm @ 100A, 10V |
|
Active |
1176216 |
STF32NM50N |
STMicroelectronics |
MDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
22A (Tc) |
150°C (TJ) |
Through Hole |
TO-220FP |
TO-220-3 Full Pack |
|
500V |
10V |
4V @ 250µA |
62.5nC @ 10V |
1973pF @ 50V |
±25V |
- |
35W (Tc) |
130 mOhm @ 11A, 10V |
|
Active |
1176217 |
IPP075N15N3GXKSA1 |
Infineon Technologies |
OptiMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
100A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO-220-3 |
TO-220-3 |
|
150V |
8V, 10V |
4V @ 270µA |
93nC @ 10V |
5470pF @ 75V |
±20V |
- |
300W (Tc) |
7.5 mOhm @ 100A, 10V |
|
Active |
1176218 |
SIHG32N50D-GE3 |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
30A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
500V |
10V |
5V @ 250µA |
96nC @ 10V |
2550pF @ 100V |
±30V |
- |
390W (Tc) |
150 mOhm @ 16A, 10V |
|
Active |
1176219 |
STW18N65M5 |
STMicroelectronics |
MDmesh™ V |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
15A (Tc) |
150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
650V |
10V |
5V @ 250µA |
31nC @ 10V |
1240pF @ 100V |
±25V |
- |
110W (Tc) |
220 mOhm @ 7.5A, 10V |
|
Active |
1176220 |
IPA60R099P6XKSA1 |
Infineon Technologies |
CoolMOS™ P6 |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
37.9A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO-220-FP |
TO-220-3 Full Pack |
|
600V |
10V |
4.5V @ 1.21mA |
70nC @ 10V |
3330pF @ 100V |
±20V |
- |
34W (Tc) |
99 mOhm @ 14.5A, 10V |
|
Active |
1176221 |
IRFS3006-7PPBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
240A (Tc) |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK (7-Lead) |
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
60V |
10V |
4V @ 250µA |
300nC @ 10V |
8850pF @ 50V |
±20V |
- |
375W (Tc) |
2.1 mOhm @ 168A, 10V |
|
Not For New Designs |
1176222 |
IPP023N10N5AKSA1 |
Infineon Technologies |
OptiMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO-220-3 |
TO-220-3 |
|
100V |
6V, 10V |
3.8V @ 270µA |
210nC @ 10V |
15600pF @ 50V |
±20V |
- |
375W (Tc) |
2.3 mOhm @ 100A, 10V |
|
Active |
1176223 |
FQA30N40 |
FairchildSemiconductor |
QFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
30A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3PN |
TO-3P-3, SC-65-3 |
|
400V |
10V |
5V @ 250µA |
120nC @ 10V |
4400pF @ 25V |
±30V |
- |
290W (Tc) |
140 mOhm @ 15A, 10V |
|
Active |
1176224 |
STP360N4F6 |
STMicroelectronics |
DeepGATE™, STripFET™ VI |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220 |
TO-220-3 |
|
40V |
10V |
4.5V @ 250µA |
340nC @ 10V |
17930pF @ 25V |
±20V |
- |
300W (Tc) |
1.8 mOhm @ 60A, 10V |
|
Obsolete |
1176225 |
FCP22N60N |
FairchildSemiconductor |
SupreMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
22A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
|
600V |
10V |
4V @ 250µA |
45nC @ 10V |
1950pF @ 100V |
±45V |
- |
205W (Tc) |
165 mOhm @ 11A, 10V |
|
Active |
1176226 |
IXTA36P15P |
IXYS |
PolarP™ |
Tube |
P-Channel |
MOSFET (Metal Oxide) |
36A (Tc) |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263 (IXTA) |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
150V |
10V |
4.5V @ 250µA |
55nC @ 10V |
3100pF @ 25V |
±20V |
- |
300W (Tc) |
110 mOhm @ 18A, 10V |
|
Active |
1176227 |
IRFPC60LCPBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
16A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
600V |
10V |
4V @ 250µA |
120nC @ 10V |
3500pF @ 25V |
±30V |
- |
280W (Tc) |
400 mOhm @ 9.6A, 10V |
|
Active |
1176228 |
IXTQ52N30P |
IXYS |
PolarHT™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
52A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P |
TO-3P-3, SC-65-3 |
|
300V |
10V |
5V @ 250µA |
110nC @ 10V |
3490pF @ 25V |
±20V |
- |
400W (Tc) |
66 mOhm @ 26A, 10V |
|
Active |
1176229 |
FDP036N10A |
FairchildSemiconductor |
PowerTrench® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
|
100V |
10V |
4V @ 250µA |
116nC @ 10V |
7295pF @ 25V |
±20V |
- |
333W (Tc) |
3.6 mOhm @ 75A, 10V |
|
Active |
1176230 |
IRLP3034PBF |
Infineon Technologies |
HEXFET® |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
195A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
40V |
4.5V, 10V |
2.5V @ 250µA |
162nC @ 4.5V |
10315pF @ 25V |
±20V |
- |
341W (Tc) |
1.7 mOhm @ 195A, 10V |
|
Active |
1176231 |
IXTQ44P15T |
IXYS |
TrenchP™ |
Tube |
P-Channel |
MOSFET (Metal Oxide) |
44A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3P |
TO-3P-3, SC-65-3 |
|
150V |
10V |
4V @ 250µA |
175nC @ 10V |
13400pF @ 25V |
±15V |
- |
298W (Tc) |
65 mOhm @ 500mA, 10V |
|
Active |
1176232 |
STW15N80K5 |
STMicroelectronics |
SuperMESH5™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
14A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
800V |
10V |
5V @ 100µA |
32nC @ 10V |
1100pF @ 100V |
±30V |
- |
190W (Tc) |
375 mOhm @ 7A, 10V |
|
Active |
1176233 |
STW19NM50N |
STMicroelectronics |
MDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
14A (Tc) |
150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
500V |
10V |
4V @ 250µA |
34nC @ 10V |
1000pF @ 50V |
±25V |
- |
110W (Tc) |
250 mOhm @ 7A, 10V |
|
Active |
1176234 |
SPW24N60C3 |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
24.3A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
650V |
10V |
3.9V @ 1.2mA |
135nC @ 10V |
3000pF @ 25V |
±20V |
- |
240W (Tc) |
160 mOhm @ 15.4A, 10V |
|
Active |
1176235 |
FCH104N60F |
FairchildSemiconductor |
HiPerFET™, Polar™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
37A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
600V |
10V |
5V @ 250µA |
139nC @ 10V |
5950pF @ 100V |
±20V |
- |
357W (Tc) |
104 mOhm @ 18.5A, 10V |
|
Active |
1176236 |
TK100E08N1,S1X |
Toshiba Semiconductor andStorage |
U-MOSVIII-H |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
100A (Ta) |
150°C (TJ) |
Through Hole |
TO-220 |
TO-220-3 |
|
80V |
10V |
4V @ 1mA |
130nC @ 10V |
9000pF @ 40V |
±20V |
- |
255W (Tc) |
3.2 mOhm @ 50A, 10V |
|
Active |
1176237 |
IRFPC60PBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
16A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
600V |
10V |
4V @ 250µA |
210nC @ 10V |
3900pF @ 25V |
±20V |
- |
280W (Tc) |
400 mOhm @ 9.6A, 10V |
|
Active |
1176238 |
R6025ANZC8 |
Rohm Semiconductor |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
25A (Tc) |
150°C (TJ) |
Through Hole |
TO-3PF |
TO-3P-3 Full Pack |
|
600V |
10V |
4.5V @ 1mA |
88nC @ 10V |
3250pF @ 10V |
±20V |
- |
150W (Tc) |
150 mOhm @ 12.5A, 10V |
|
Not For New Designs |
1176239 |
IPW60R099P6XKSA1 |
Infineon Technologies |
CoolMOS™ P6 |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
37.9A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
600V |
10V |
4.5V @ 1.21mA |
70nC @ 10V |
3330pF @ 100V |
±20V |
- |
278W (Tc) |
99 mOhm @ 14.5A, 10V |
|
Active |
1176240 |
STP24NM60N |
STMicroelectronics |
MDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220 |
TO-220-3 |
|
600V |
10V |
4V @ 250µA |
46nC @ 10V |
1400pF @ 50V |
±30V |
- |
125W (Tc) |
190 mOhm @ 8A, 10V |
|
Active |
1176241 |
FDA28N50F |
FairchildSemiconductor |
UniFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
28A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-3PN |
TO-3P-3, SC-65-3 |
|
500V |
10V |
5V @ 250µA |
105nC @ 10V |
5387pF @ 25V |
±30V |
- |
310W (Tc) |
175 mOhm @ 14A, 10V |
|
Active |
1176242 |
STF21N65M5 |
STMicroelectronics |
MDmesh™ V |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
150°C (TJ) |
Through Hole |
TO-220FP |
TO-220-3 Full Pack |
|
650V |
10V |
5V @ 250µA |
50nC @ 10V |
1950pF @ 100V |
±25V |
- |
30W (Tc) |
190 mOhm @ 8.5A, 10V |
|
Active |
1176243 |
STF24N60M2 |
STMicroelectronics |
MDmesh™ II Plus |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
18A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220FP |
TO-220-3 Full Pack |
|
600V |
10V |
4V @ 250µA |
29nC @ 10V |
1060pF @ 100V |
±25V |
- |
30W (Tc) |
190 mOhm @ 9A, 10V |
|
Active |
1176244 |
STP21NM60ND |
STMicroelectronics |
FDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
600V |
10V |
5V @ 250µA |
60nC @ 10V |
1800pF @ 50V |
±25V |
- |
140W (Tc) |
220 mOhm @ 8.5A, 10V |
|
Active |
1176245 |
STW21NM60ND |
STMicroelectronics |
FDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
600V |
10V |
5V @ 250µA |
60nC @ 10V |
1800pF @ 50V |
±25V |
- |
140W (Tc) |
220 mOhm @ 8.5A, 10V |
|
Active |
1176246 |
IPP60R099C7XKSA1 |
Infineon Technologies |
CoolMOS™ C7 |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
22A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO220-3-1 |
TO-220-3 |
|
600V |
10V |
4V @ 490µA |
42nC @ 10V |
1819pF @ 400V |
±20V |
- |
110W (Tc) |
99 mOhm @ 9.7A, 10V |
|
Active |
1176247 |
STW18NM80 |
STMicroelectronics |
MDmesh™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
800V |
10V |
5V @ 250µA |
70nC @ 10V |
2070pF @ 50V |
±30V |
- |
190W (Tc) |
295 mOhm @ 8.5A, 10V |
|
Active |
1176248 |
APT8M100B |
Microsemi SoC |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
8A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 [B] |
TO-247-3 |
|
1000V (1kV) |
10V |
5V @ 1mA |
60nC @ 10V |
1885pF @ 25V |
±30V |
- |
290W (Tc) |
1.8 Ohm @ 4A, 10V |
|
Active |
1176249 |
SIHP33N60EF-GE3 |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
33A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
600V |
10V |
4V @ 250µA |
155nC @ 10V |
3454pF @ 100V |
±30V |
- |
278W (Tc) |
98 mOhm @ 16.5A, 10V |
|
Active |
1176250 |
STP185N55F3 |
STMicroelectronics |
STripFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
55V |
10V |
4V @ 250µA |
100nC @ 10V |
6800pF @ 25V |
±20V |
- |
330W (Tc) |
3.8 mOhm @ 60A, 10V |
|
Active |
1176251 |
IPW90R340C3 |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
15A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
900V |
10V |
3.5V @ 1mA |
94nC @ 10V |
2400pF @ 100V |
±20V |
- |
208W (Tc) |
340 mOhm @ 9.2A, 10V |
|
Active |
1176252 |
IPW60R125CP |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
25A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
600V |
10V |
3.5V @ 1.1mA |
70nC @ 10V |
2500pF @ 100V |
±20V |
- |
208W (Tc) |
125 mOhm @ 16A, 10V |
|
Active |
1176253 |
TK15J60U(F) |
Toshiba Semiconductor andStorage |
DTMOSII |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
15A (Ta) |
150°C (TJ) |
Through Hole |
TO-3P(N) |
TO-3P-3, SC-65-3 |
|
600V |
10V |
5V @ 1mA |
17nC @ 10V |
950pF @ 10V |
±30V |
- |
170W (Tc) |
300 mOhm @ 7.5A, 10V |
|
Active |
1176254 |
IRFP350LCPBF |
Vishay Siliconix |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
16A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247-3 |
|
400V |
- |
4V @ 250µA |
76nC @ 10V |
2200pF @ 25V |
- |
- |
190W (Tc) |
300 mOhm @ 9.6A, 10V |
|
Active |
1176255 |
STP23NM60ND |
STMicroelectronics |
FDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
19.5A (Tc) |
150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
600V |
10V |
5V @ 250µA |
69nC @ 10V |
2100pF @ 50V |
±25V |
- |
150W (Tc) |
180 mOhm @ 10A, 10V |
|
Active |
1176257 |
IXTH26N60P |
IXYS |
PolarHV™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
26A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 (IXTH) |
TO-247-3 |
|
600V |
10V |
5V @ 250µA |
72nC @ 10V |
4150pF @ 25V |
±30V |
- |
460W (Tc) |
270 mOhm @ 500mA, 10V |
|
Active |
1176258 |
STP18NM80 |
STMicroelectronics |
MDmesh™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17A (Tc) |
150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
800V |
10V |
5V @ 250µA |
70nC @ 10V |
2070pF @ 50V |
±30V |
- |
190W (Tc) |
295 mOhm @ 8.5A, 10V |
|
Active |
1176259 |
HUF75652G3 |
FairchildSemiconductor |
UltraFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
75A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
100V |
10V |
4V @ 250µA |
475nC @ 20V |
7585pF @ 25V |
±20V |
- |
515W (Tc) |
8 mOhm @ 75A, 10V |
|
Active |
1176260 |
IPW60R099C7XKSA1 |
Infineon Technologies |
CoolMOS™ C7 |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
14A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
600V |
10V |
4V @ 490µA |
42nC @ 10V |
1819pF @ 400V |
±20V |
- |
110W (Tc) |
99 mOhm @ 9.7A, 10V |
|
Active |
1176261 |
STP400N4F6 |
STMicroelectronics |
DeepGATE™, STripFET™ VI |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220 |
TO-220-3 |
|
40V |
10V |
4.5V @ 250µA |
377nC @ 10V |
20000pF @ 25V |
±20V |
- |
300W (Tc) |
1.7 mOhm @ 60A, 10V |
|
Obsolete |
1176262 |
STW23N85K5 |
STMicroelectronics |
SuperMESH5™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
19A (Tc) |
150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
850V |
10V |
5V @ 100µA |
38nC @ 10V |
1650pF @ 100V |
±30V |
- |
250W (Tc) |
275 mOhm @ 9.5A, 10V |
|
Active |
1176263 |
IXTH10P50P |
IXYS |
PolarP™ |
Tube |
P-Channel |
MOSFET (Metal Oxide) |
10A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 (IXTH) |
TO-247-3 |
|
500V |
10V |
4V @ 250µA |
50nC @ 10V |
2840pF @ 25V |
±20V |
- |
300W (Tc) |
1 Ohm @ 5A, 10V |
|
Active |
1176264 |
STP190N55LF3 |
STMicroelectronics |
STripFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
120A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220-3 |
TO-220-3 |
|
55V |
5V, 10V |
2.5V @ 250µA |
80nC @ 5V |
6200pF @ 25V |
±18V |
- |
312W (Tc) |
3.7 mOhm @ 30A, 10V |
|
Active |
1176265 |
STF26NM60N |
STMicroelectronics |
MDmesh™ II |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
20A (Tc) |
150°C (TJ) |
Through Hole |
TO-220FP |
TO-220-3 Full Pack |
|
600V |
10V |
4V @ 250µA |
60nC @ 10V |
1800pF @ 50V |
±30V |
- |
35W (Tc) |
165 mOhm @ 10A, 10V |
|
Active |
1176266 |
APT30F50B |
Microsemi SoC |
POWER MOS 8™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
30A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 [B] |
TO-247-3 |
|
500V |
10V |
5V @ 1mA |
115nC @ 10V |
4525pF @ 25V |
±30V |
- |
415W (Tc) |
190 mOhm @ 14A, 10V |
|
Active |
1176267 |
APT24F50B |
Microsemi SoC |
POWER MOS 8™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
24A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 [B] |
TO-247-3 |
|
500V |
10V |
5V @ 1mA |
90nC @ 10V |
3630pF @ 25V |
±30V |
- |
335W (Tc) |
240 mOhm @ 11A, 10V |
|
Active |
1176268 |
IXTH8P50 |
IXYS |
- |
Tube |
P-Channel |
MOSFET (Metal Oxide) |
8A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 (IXTH) |
TO-247-3 |
|
500V |
10V |
5V @ 250µA |
130nC @ 10V |
3400pF @ 25V |
±20V |
- |
180W (Tc) |
1.2 Ohm @ 4A, 10V |
|
Active |
1176269 |
IXFP3N120 |
IXYS |
HiPerFET™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
3A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
|
1200V (1.2kV) |
10V |
5V @ 1.5mA |
39nC @ 10V |
1050pF @ 25V |
±20V |
- |
200W (Tc) |
4.5 Ohm @ 500mA, 10V |
|
Active |
1176270 |
EPC2018 |
EPC |
eGaN® |
Tape & Reel (TR) |
N-Channel |
GaNFET (Gallium Nitride) |
12A (Ta) |
-40°C ~ 125°C (TJ) |
Surface Mount |
Die |
Die |
|
150V |
5V |
2.5V @ 3mA |
7.5nC @ 5V |
540pF @ 100V |
+6V, -5V |
- |
- |
25 mOhm @ 6A, 5V |
|
Last Time Buy |
1176273 |
STW22N95K5 |
STMicroelectronics |
SuperMESH5™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
17.5A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 |
TO-247-3 |
|
950V |
10V |
5V @ 100µA |
48nC @ 10V |
1550pF @ 100V |
±30V |
- |
250W (Tc) |
330 mOhm @ 9A, 10V |
|
Active |
1176274 |
SPW32N50C3FKSA1 |
Infineon Technologies |
CoolMOS™ |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
32A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO247-3 |
TO-247-3 |
|
560V |
10V |
3.9V @ 1.8mA |
170nC @ 10V |
4200pF @ 25V |
±20V |
- |
284W (Tc) |
110 mOhm @ 20A, 10V |
|
Active |
1176275 |
IRFP4868PBF |
Infineon Technologies |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
70A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-247AC |
TO-247-3 |
|
300V |
10V |
5V @ 250µA |
270nC @ 10V |
10774pF @ 50V |
±20V |
- |
517W (Tc) |
32 mOhm @ 42A, 10V |
|
Active |
1176276 |
STP270N8F7 |
STMicroelectronics |
DeepGATE™, STripFET™ VII |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
180A (Tc) |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220 |
TO-220-3 |
|
80V |
10V |
4V @ 250µA |
193nC @ 10V |
13600pF @ 50V |
±20V |
- |
315W (Tc) |
2.5 mOhm @ 90A, 10V |
|
Active |
1176277 |
R5016FNX |
Rohm Semiconductor |
- |
Bulk |
N-Channel |
MOSFET (Metal Oxide) |
16A (Ta) |
150°C (TJ) |
Through Hole |
TO-220FM |
TO-220-3 Full Pack |
|
500V |
10V |
5V @ 1mA |
46nC @ 10V |
1700pF @ 25V |
±30V |
- |
50W (Tc) |
325 mOhm @ 8A, 10V |
|
Active |
1176278 |
IXTH110N25T |
IXYS |
- |
Tube |
N-Channel |
MOSFET (Metal Oxide) |
110A (Tc) |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-247 (IXTH) |
TO-247-3 |
|
250V |
10V |
4.5V @ 1mA |
157nC @ 10V |
9400pF @ 25V |
±20V |
- |
694W (Tc) |
24 mOhm @ 55A, 10V |
|
Active |