| Артикул | Производитель | Серия | Упаковка | Тип | Технология | Номинальный ток стока при 25 С | Диапазон рабочих температур | Способ монтажа | Типоразмер корпуса в каталоге поставщика | Типоразмер | Мощность не более | Напряжение СИ | Drive_Voltage_Max_Rds_On__Min_Rds_On | Порогое напряжение ЗИ не более при токе стока | Gate_Charge_Qg_Max__Vgs | Input_Capacitance_Ciss_Max__Vds | Vgs_Max | Особенности | Рассеиваемая мощность не более | Сопротивление канала не более при токе стока и напряжении ЗИ | Входная емкость при напряжении ЗИ | Жизненный цикл | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Жизненный цикл | |||||||||||||||||||||||
| 1184325 | CPMF-1200-S080B | Cree Inc. | * | Bulk | - | - | - | - | Surface Mount | Die | Die | - | - | - | - | - | - | - | - | - | Obsolete | ||
| 1184326 | CPMF-1200-S160B | Cree Inc. | * | Bulk | - | - | - | - | Surface Mount | Die | Die | - | - | - | - | - | - | - | - | - | Obsolete | ||
| 1184852 | C2M1000170J-TR | Cree Inc. | C2M™ | Tape & Reel (TR) | N-Channel | SiCFET (Silicon Carbide) | 5.3A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7 (Straight Leads) | 1700V (1.7kV) | - | 3.1V @ 500µA (Typ) | 13nC @ 20V | 200pF @ 1000V | - | - | 78W (Tc) | 1.4 Ohm @ 2A, 20V | Active | ||
| 1185128 | C3M0065090J-TR | Cree Inc. | C3M™ | Tape & Reel (TR) | N-Channel | SiCFET (Silicon Carbide) | 35A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 900V | - | 2.1V @ 5mA | 30nC @ 15V | 660pF @ 600V | - | - | 113W (Tc) | 78 mOhm @ 20A, 15V | Active | ||
| 1192823 | C3M0280090J-TR | Cree Inc. | C3M™ | Tape & Reel (TR) | N-Channel | SiCFET (Silicon Carbide) | 11A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 900V | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | - | 50W (Tc) | 360 mOhm @ 7.5A, 15V | Active | ||
| 1192826 | C3M0280090D | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 11.5A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 900V | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | - | 54W (Tc) | 360 mOhm @ 7.5A, 15V | Active | ||
| 1192872 | C2M0280120D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 10A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1200V (1.2kV) | 20V | 2.8V @ 1.25mA (Typ) | 20.4nC @ 20V | 259pF @ 1000V | +25V, -10V | - | 62.5W (Tc) | 370 mOhm @ 6A, 20V | Active | ||
| 1192877 | C2M1000170J | Cree Inc. | C2M™ | Bulk | N-Channel | SiCFET (Silicon Carbide) | 5.3A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7 (Straight Leads) | 1700V (1.7kV) | 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | 200pF @ 1000V | +25V, -10V | - | 78W (Tc) | 1.4 Ohm @ 2A, 20V | Active | ||
| 1192885 | C3M0120090D | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 23A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 900V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | - | 97W (Tc) | 155 mOhm @ 15A, 15V | Active | ||
| 1192892 | C3M0120090J | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 22A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 900V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | - | 83W (Tc) | 155 mOhm @ 15A, 15V | Active | ||
| 1192903 | C2M0160120D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 17.7A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1200V (1.2kV) | 20V | 2.5V @ 500µA | 32.6nC @ 20V | 527pF @ 800V | +25V, -10V | - | 125W (Tc) | 196 mOhm @ 10A, 20V | Active | ||
| 1192915 | C3M0065090D | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 36A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 900V | 15V | 2.1V @ 5mA | 30.4nC @ 15V | 660pF @ 600V | +18V, -8V | - | 125W (Tc) | 78 mOhm @ 20A, 15V | Active | ||
| 1192919 | C3M0065090J | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 35A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 900V | 15V | 2.1V @ 5mA | 30nC @ 15V | 660pF @ 600V | +19V, -8V | - | 113W (Tc) | 78 mOhm @ 20A, 15V | Active | ||
| 1192953 | C2M0080120D | Cree Inc. | C2M™ | Bulk | N-Channel | SiCFET (Silicon Carbide) | 36A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1200V (1.2kV) | 20V | 4V @ 5mA | 62nC @ 5V | 950pF @ 1000V | +25V, -10V | - | 192W (Tc) | 98 mOhm @ 20A, 20V | Active | ||
| 1192997 | C2M0040120D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 60A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1200V (1.2kV) | 20V | 2.8V @ 10mA | 115nC @ 20V | 1893pF @ 1000V | +25V, -10V | - | 330W (Tc) | 52 mOhm @ 40A, 20V | Active | ||
| 1193015 | C2M0025120D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 90A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1200V (1.2kV) | 20V | 2.4V @ 10mA | 161nC @ 20V | 2788pF @ 1000V | +25V, -10V | - | 463W (Tc) | 34 mOhm @ 50A, 20V | Active | ||
| 1193017 | C2M0045170D | Cree Inc. | C2M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 72A (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1700V (1.7kV) | 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1kV | +25V, -10V | - | 520W (Tc) | 70 mOhm @ 50A, 20V | Active | ||
| 1195581 | C3M0280090J | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 11A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 900V | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | - | 50W (Tc) | 360 mOhm @ 7.5A, 15V | Active | ||
| 1198467 | C3M0120100K | Cree Inc. | C3M™ | - | N-Channel | SiCFET (Silicon Carbide) | 22A | -55°C ~ 150°C (TJ) | Through Hole | - | 4-SIP | 1000V (1kV) | 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | ±15V | - | 83W (Tc) | 170 mOhm @ 15A, 15V | Active | ||
| 1199719 | C2M1000170D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 4.9A (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1700V (1.7kV) | 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | +25V, -10V | - | 69W (Tc) | 1.1 Ohm @ 2A, 20V | Active | ||
| 1204450 | C3M0065100K | Cree Inc. | C3M™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 35A (Tc) | -55°C ~ 150°C (TJ) | - | TO-247-4L | TO-247-4 | 1000V (1kV) | 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | +19V, -8V | - | 113.5W (Tc) | 78 mOhm @ 20A, 15V | Active | ||
| 1208865 | CMF10120D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 24A (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247 | TO-247-3 | 1200V (1.2kV) | 20V | 4V @ 500µA | 47.1nC @ 20V | 928pF @ 800V | +25V, -5V | - | 134W (Tc) | 220 mOhm @ 10A, 20V | Obsolete | ||
| 1208877 | CMF20120D | Cree Inc. | Z-FET™ | Tube | N-Channel | SiCFET (Silicon Carbide) | 42A (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1200V (1.2kV) | 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | +25V, -5V | - | 215W (Tc) | 110 mOhm @ 20A, 20V | Obsolete | ||
| 1210866 | C3M0120090J-TR | Cree Inc. | C3M™ | Tape & Reel (TR) | N-Channel | SiCFET (Silicon Carbide) | 22A (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 900V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | - | 83W (Tc) | 155 mOhm @ 15A, 15V | Active | ||
| 1218293 | C3M0075120K | Cree Inc. | * | Tube | - | - | - | - | Through Hole | TO-247-4L | TO-247-4 | - | - | - | - | - | - | - | - | - | Active |
