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Артикул Производитель Серия Упаковка Напряжение питания Тип входного сигнала Типовое время нарастания спада Диапазон рабочих температур Способ монтажа Типоразмер Типоразмер корпуса в каталоге поставщика Driven_Configuration Направление канала Number_of_Drivers Gate_Type Logic_Voltage___VIL_VIH Current___Peak_Output_Source_Sink Напряжение верхнего плеча Жизненный цикл
Жизненный цикл
1821645 IRS2101PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821646 L6395D STMicroelectronics - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO Half-Bridge Independent 2 IGBT, N-Channel MOSFET 1.1V, 1.9V 290mA, 430mA 600V Active
1821647 IR2106PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821648 IRS2106PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821649 MIC4423ZN Microchip Technology - Tube 4.5 V ~ 18 V Inverting 28ns, 32ns 0°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A - Active
1821650 IRS2109SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821651 ADP3650JRZ Analog Devices Inc. - Tube 4.15 V ~ 13.2 V Non-Inverting 20ns, 16ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET 0.8V, 2V - - Active
1821652 NCP5106BPG ON Semiconductor - Tube 10 V ~ 20 V Non-Inverting 85ns, 35ns -40°C ~ 125°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.3V 250mA, 500mA 600V Last Time Buy
1821653 IR2127SPBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821654 UCC27528D Texas Instruments - Tube 4.5 V ~ 18 V Non-Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel MOSFET - 5A, 5A - Active
1821655 IR2117SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1821656 IR2118PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1821657 IR2111SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 250mA, 500mA 600V Active
1821658 IRS2011PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 25ns, 15ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.7V 1A, 1A 200V Active
1821659 IR2108SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821660 TC4423COE Microchip Technology - Tube 4.5 V ~ 18 V Inverting 23ns, 25ns 0°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A - Active
1821661 IR25607SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 600V Active
1821662 TC4405COA Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 40ns, 40ns (Max) 0°C ~ 70°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821663 IR21094SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821664 IR21064SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821665 IR2127PBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821666 IRS21844PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 1.9A, 2.3A 600V Active
1821667 ISL6612ACBZ Intersil - Tube 10.8 V ~ 13.2 V Non-Inverting 26ns, 18ns 0°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - 1.25A, 2A 36V Active
1821668 IR2301PBF Infineon Technologies - Tube 5 V ~ 20 V Non-Inverting 130ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821669 IRS21864PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 22ns, 18ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 4A, 4A 600V Active
1821670 MAX8552EUB+ Maxim Integrated - Tube 4.5 V ~ 6.5 V Non-Inverting 14ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) 10-uMAX Half-Bridge Synchronous 2 N-Channel MOSFET 0.8V, 2.5V - - Active
1821671 LM5100AMR/NOPB Texas Instruments - Tube 9 V ~ 14 V Non-Inverting 430ns, 260ns -40°C ~ 125°C (TJ) Surface Mount 8-PowerSOIC (0.154", 3.90mm Width) 8-SO PowerPad Half-Bridge Independent 2 N-Channel MOSFET 2.3V, - 3A, 3A 118V Active
1821672 LTC4441EMSE#PBF Linear Technology - Tube 5 V ~ 25 V Non-Inverting 13ns, 8ns -40°C ~ 125°C (TJ) Surface Mount 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad 10-MSOP-EP Low-Side Single 1 N-Channel MOSFET 1.8V, 2V 6A, 6A - Active
1821673 IRS21834PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 1.9A, 2.3A 600V Active
1821674 UCC27201AD Texas Instruments - Bulk 8 V ~ 17 V Non-Inverting 8ns, 7ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.5V 3A, 3A 120V Active
1821675 MAX4429CPA+ Maxim Integrated - Tube 4.5 V ~ 18 V Inverting 25ns, 25ns 0°C ~ 70°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2.4V 6A, 6A - Active
1821676 MAX628CPA+ Maxim Integrated - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 25ns, 20ns 0°C ~ 70°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 2A, 2A - Active
1821677 IR21363JPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1821678 MAX8702ETP+ Maxim Integrated - Tube 4.5 V ~ 28 V Non-Inverting 16ns, 14ns -40°C ~ 150°C (TJ) Surface Mount 20-WFQFN Exposed Pad 20-TQFN (4x4) Half-Bridge Synchronous 4 N-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821679 IRS2336DJPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.5V 200mA, 350mA 600V Active
1821680 IR2133JPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Active
1821681 MAX15012AASA+ Maxim Integrated - Tube 8 V ~ 12.6 V Non-Inverting 65ns, 65ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET - 2A, 2A 175V Active
1821682 UC2710T Texas Instruments - Tube 4.7 V ~ 18 V Inverting, Non-Inverting 85ns, 85ns -55°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821683 UC2708DW Texas Instruments - Tube 5 V ~ 35 V Non-Inverting 25ns, 25ns -25°C ~ 85°C (TA) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 3A, 3A - Active
1821684 UC2708N Texas Instruments - Tube 5 V ~ 35 V Non-Inverting 25ns, 25ns -25°C ~ 85°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 3A, 3A - Active
1821685 MAX5063AASA+ Maxim Integrated - Tube 8 V ~ 12.6 V Non-Inverting 65ns, 65ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2V 2A, 2A 125V Obsolete
1821686 IR2233SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Active
1821687 MAX4426MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting 20ns, 20ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821688 MAX4429MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting 25ns, 25ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2.4V 6A, 6A - Active
1821689 MCP1406-E/P Microchip Technology - Tube 4.5 V ~ 18 V Inverting 20ns, 20ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 0.8V, 2.4V 6A, 6A - Active
1821690 UCC27517ADBVT Texas Instruments - Tape & Reel (TR) 4.5 V ~ 18 V Inverting, Non-Inverting 8ns, 7ns -40°C ~ 140°C (TJ) Surface Mount SC-74A, SOT-753 SOT-23-5 Low-Side Single 1 IGBT, N-Channel MOSFET 1V, 2.4V 4A, 4A - Active
1821693 MCP14A0451-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Inverting 9.5ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 4.5A, 4.5A - Active
1821694 MCP14A0452-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 9.5ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 4.5A, 4.5A - Active
1821695 MIC4428YM Microchip Technology - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 20ns, 29ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821696 MCP14A0601-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Inverting 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821697 MCP14A0602-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821698 MIC4428YN Microchip Technology - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 20ns, 29ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821699 IR2153SPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - - 600V Not For New Designs
1821700 UCD7138DRST Texas Instruments - Tape & Reel (TR) 4.5 V ~ 18 V Inverting 4ns, 3.5ns -40°C ~ 125°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-SON (3x3) Low-Side Single 1 N-Channel MOSFET 1.08V, 1.93V 4A, 6A - Active
1821703 UCC27536DBVT Texas Instruments - Tape & Reel (TR) 10 V ~ 32 V Inverting 15ns, 10ns -40°C ~ 140°C (TJ) Surface Mount SC-74A, SOT-753 SOT-23-5 High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 1.2V, 2.2V 2.5A, 2.5A - Active
1821706 MIC4608YM Microchip Technology - Tube 10 V ~ 20 V Non-Inverting 31ns, 31ns -40°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.2V 1A, 1A 600V Active
1821707 MAX17604ATA+T Maxim Integrated - Cut Tape (CT) 4 V ~ 14 V Non-Inverting 40ns, 25ns -40°C ~ 150°C (TJ) Surface Mount 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Low-Side Independent 2 N-Channel MOSFET 2V, 4.25V 4A, 4A - Active
1821708 MIC4421ZM Microchip Technology - Tube 4.5 V ~ 18 V Inverting 20ns, 24ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.4V 9A, 9A - Active
1821709 IRS2111SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 290mA, 600mA 600V Active
1821710 MIC4422ZM Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 20ns, 24ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.4V 9A, 9A - Active
1821711 UCC27324P Texas Instruments - Tube 4.5 V ~ 15 V Non-Inverting 20ns, 15ns -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 1V, 2V 4A, 4A - Active
1821712 L6386AD STMicroelectronics - Tube 17V (Max) Inverting 50ns, 30ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SO Half-Bridge Independent 2 IGBT, N-Channel MOSFET 1.5V, 3.6V 400mA, 650mA 600V Active
1821713 L6392D STMicroelectronics - Tube 12.5 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SO Half-Bridge Independent 2 IGBT, N-Channel MOSFET 1.1V, 1.9V 290mA, 430mA 600V Active
1821714 UCC27523D Texas Instruments - Tube 4.5 V ~ 18 V Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel MOSFET 1V, 2.3V 5A, 5A - Active
1821715 UCC27525D Texas Instruments - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel MOSFET 1V, 2.3V 5A, 5A - Active
1821716 UCC27524ADGN Texas Instruments - Tube 4.5 V ~ 18 V Non-Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad 8-MSOP-PowerPad Low-Side Independent 2 IGBT, N-Channel MOSFET 1V, 2.3V 5A, 5A - Active
1821717 IRS2112SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821718 TC4423CPA Microchip Technology - Tube 4.5 V ~ 18 V Inverting 23ns, 25ns 0°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A - Active
1821719 IRS24531DSPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 120ns, 50ns -25°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Synchronous 4 N-Channel MOSFET 4.7V, 9.3V 180mA, 260mA 600V Active
1821720 L6393D STMicroelectronics - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SO Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 1.1V, 1.9V 290mA, 430mA 600V Active
1821721 LM9061M/NOPB Texas Instruments - Tube 7 V ~ 26 V Non-Inverting - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 N-Channel MOSFET 1.5V, 3.5V - - Active
1821722 IRS21084SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821723 IRS2118PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821724 TC4431COA Microchip Technology - Tube 4.5 V ~ 30 V Inverting 25ns, 33ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side or Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821725 TPIC46L01DB Texas Instruments - Tube 4.5 V ~ 5.5 V Non-Inverting 3.5µs, 3µs -40°C ~ 150°C (TJ) Surface Mount 28-SSOP (0.209", 5.30mm Width) 28-SSOP Low-Side Independent 6 N-Channel MOSFET - 1.2mA, 1.2mA - Active
1821726 IRS21064SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821727 IR21271PBF Infineon Technologies - Tube 9 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821728 IR21091PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821729 IR21094PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821730 IRS2110PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 500V Active
1821731 IR21064PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821732 IR2108PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821733 TPS2811P Texas Instruments - Tube 4 V ~ 14 V Inverting 14ns, 15ns -40°C ~ 125°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Synchronous 2 N-Channel, P-Channel MOSFET 1V, 4V 2A, 2A - Active
1821734 IRS21094PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821735 IRS2117PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821736 IR21365SPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1821737 MAX8811EEE+ Maxim Integrated - Tube 4.5 V ~ 7 V Non-Inverting 14ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 16-SSOP (0.154", 3.90mm Width) 16-QSOP Half-Bridge Synchronous 4 N-Channel MOSFET 0.8V, 2.6V 6A, 6A 30V Active
1821738 UC2710N Texas Instruments - Tube 4.7 V ~ 18 V Inverting, Non-Inverting 85ns, 85ns -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821739 MAX620CWN+ Maxim Integrated - Tube 4.5 V ~ 16.5 V Non-Inverting 1.7µs, 2.5µs 0°C ~ 70°C (TA) Surface Mount 18-SOIC (0.295", 7.50mm Width) 18-SOIC High-Side Independent 4 N-Channel MOSFET 0.8V, 2.4V - - Obsolete
1821740 IR2233PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-DIP Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Active
1821741 MAX4428MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting, Non-Inverting 20ns, 20ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821742 MAX4427MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Non-Inverting 20ns, 20ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821743 TSC426MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting 25ns, 25ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 1.5A, 1.5A - Active
1821744 TSC428MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting, Non-Inverting 25ns, 25ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 1.5A, 1.5A - Active
1821745 VLA553-02R Powerex Inc. - Bulk 14.2 V ~ 15.8 V Non-Inverting - -25°C ~ 70°C (TA) Chassis Mount Module Module Half-Bridge Independent 2 IGBT - 24A, 24A - Active
1821746 VLA553-01R Powerex Inc. - Bulk 14.2 V ~ 15.8 V Non-Inverting - -25°C ~ 70°C (TA) Chassis Mount Module OctaPAK 7+1 Half-Bridge Independent 2 IGBT - 24A, 24A - Active
1821747 NCP81151BMNTBG ON Semiconductor - Tape & Reel (TR) 4.5 V ~ 5.5 V Non-Inverting 16ns, 11ns -40°C ~ 150°C (TJ) Surface Mount 8-VFDFN Exposed Pad 8-DFN (2x2) Half-Bridge Synchronous 2 N-Channel MOSFET 0.6V, 3.3V - 40V Active
1821750 NCP5901DR2G ON Semiconductor - Tape & Reel (TR) 4.5 V ~ 13.2 V Non-Inverting 16ns, 11ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET 0.7V, 3.4V - 35V Discontinued
1821753 MIC4604YM-TR Microchip Technology - Cut Tape (CT) 5.25 V ~ 16 V Non-Inverting 20ns, 20ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.2V 1.5A, 1A - Active
1821755 FL3100TSX FairchildSemiconductor - Tape & Reel (TR) 4.5 V ~ 18 V Non-Inverting 13ns, 9ns -55°C ~ 150°C (TJ) Surface Mount SC-74A, SOT-753 SOT-23-5 Low-Side Single 1 N-Channel MOSFET 0.8V, 2V 3A, 3.2A - Discontinued

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