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Manufacturer Part Number Manufacturer Series Packaging Voltage Supply Input Type Rise Fall Time Typ Operating Temperature Mounting Type Package Case Supplier Device Package Driven Configuration Channel Type Number of Drivers Gate Type Logic Voltage VIL VIH Current Peak Output Source Sink High Side Voltage Max Bootstrap Lifecycle
Lifecycle
1821645 IRS2101PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821646 L6395D STMicroelectronics - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO Half-Bridge Independent 2 IGBT, N-Channel MOSFET 1.1V, 1.9V 290mA, 430mA 600V Active
1821647 IR2106PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821648 IRS2106PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821649 MIC4423ZN Microchip Technology - Tube 4.5 V ~ 18 V Inverting 28ns, 32ns 0°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A - Active
1821650 IRS2109SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821651 ADP3650JRZ Analog Devices Inc. - Tube 4.15 V ~ 13.2 V Non-Inverting 20ns, 16ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET 0.8V, 2V - - Active
1821652 NCP5106BPG ON Semiconductor - Tube 10 V ~ 20 V Non-Inverting 85ns, 35ns -40°C ~ 125°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.3V 250mA, 500mA 600V Last Time Buy
1821653 IR2127SPBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821654 UCC27528D Texas Instruments - Tube 4.5 V ~ 18 V Non-Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel MOSFET - 5A, 5A - Active
1821655 IR2117SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1821656 IR2118PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1821657 IR2111SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 250mA, 500mA 600V Active
1821658 IRS2011PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 25ns, 15ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.7V 1A, 1A 200V Active
1821659 IR2108SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821660 TC4423COE Microchip Technology - Tube 4.5 V ~ 18 V Inverting 23ns, 25ns 0°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A - Active
1821661 IR25607SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 600V Active
1821662 TC4405COA Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 40ns, 40ns (Max) 0°C ~ 70°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821663 IR21094SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821664 IR21064SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821665 IR2127PBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821666 IRS21844PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 1.9A, 2.3A 600V Active
1821667 ISL6612ACBZ Intersil - Tube 10.8 V ~ 13.2 V Non-Inverting 26ns, 18ns 0°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - 1.25A, 2A 36V Active
1821668 IR2301PBF Infineon Technologies - Tube 5 V ~ 20 V Non-Inverting 130ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821669 IRS21864PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 22ns, 18ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 4A, 4A 600V Active
1821670 MAX8552EUB+ Maxim Integrated - Tube 4.5 V ~ 6.5 V Non-Inverting 14ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) 10-uMAX Half-Bridge Synchronous 2 N-Channel MOSFET 0.8V, 2.5V - - Active
1821671 LM5100AMR/NOPB Texas Instruments - Tube 9 V ~ 14 V Non-Inverting 430ns, 260ns -40°C ~ 125°C (TJ) Surface Mount 8-PowerSOIC (0.154", 3.90mm Width) 8-SO PowerPad Half-Bridge Independent 2 N-Channel MOSFET 2.3V, - 3A, 3A 118V Active
1821672 LTC4441EMSE#PBF Linear Technology - Tube 5 V ~ 25 V Non-Inverting 13ns, 8ns -40°C ~ 125°C (TJ) Surface Mount 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad 10-MSOP-EP Low-Side Single 1 N-Channel MOSFET 1.8V, 2V 6A, 6A - Active
1821673 IRS21834PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 1.9A, 2.3A 600V Active
1821674 UCC27201AD Texas Instruments - Bulk 8 V ~ 17 V Non-Inverting 8ns, 7ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.5V 3A, 3A 120V Active
1821675 MAX4429CPA+ Maxim Integrated - Tube 4.5 V ~ 18 V Inverting 25ns, 25ns 0°C ~ 70°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2.4V 6A, 6A - Active
1821676 MAX628CPA+ Maxim Integrated - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 25ns, 20ns 0°C ~ 70°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 2A, 2A - Active
1821677 IR21363JPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1821678 MAX8702ETP+ Maxim Integrated - Tube 4.5 V ~ 28 V Non-Inverting 16ns, 14ns -40°C ~ 150°C (TJ) Surface Mount 20-WFQFN Exposed Pad 20-TQFN (4x4) Half-Bridge Synchronous 4 N-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821679 IRS2336DJPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.5V 200mA, 350mA 600V Active
1821680 IR2133JPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Active
1821681 MAX15012AASA+ Maxim Integrated - Tube 8 V ~ 12.6 V Non-Inverting 65ns, 65ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET - 2A, 2A 175V Active
1821682 UC2710T Texas Instruments - Tube 4.7 V ~ 18 V Inverting, Non-Inverting 85ns, 85ns -55°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821683 UC2708DW Texas Instruments - Tube 5 V ~ 35 V Non-Inverting 25ns, 25ns -25°C ~ 85°C (TA) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 3A, 3A - Active
1821684 UC2708N Texas Instruments - Tube 5 V ~ 35 V Non-Inverting 25ns, 25ns -25°C ~ 85°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 3A, 3A - Active
1821685 MAX5063AASA+ Maxim Integrated - Tube 8 V ~ 12.6 V Non-Inverting 65ns, 65ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2V 2A, 2A 125V Obsolete
1821686 IR2233SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Active
1821687 MAX4426MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting 20ns, 20ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821688 MAX4429MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting 25ns, 25ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2.4V 6A, 6A - Active
1821689 MCP1406-E/P Microchip Technology - Tube 4.5 V ~ 18 V Inverting 20ns, 20ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 0.8V, 2.4V 6A, 6A - Active
1821690 UCC27517ADBVT Texas Instruments - Tape & Reel (TR) 4.5 V ~ 18 V Inverting, Non-Inverting 8ns, 7ns -40°C ~ 140°C (TJ) Surface Mount SC-74A, SOT-753 SOT-23-5 Low-Side Single 1 IGBT, N-Channel MOSFET 1V, 2.4V 4A, 4A - Active
1821693 MCP14A0451-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Inverting 9.5ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 4.5A, 4.5A - Active
1821694 MCP14A0452-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 9.5ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 4.5A, 4.5A - Active
1821695 MIC4428YM Microchip Technology - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 20ns, 29ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821696 MCP14A0601-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Inverting 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821697 MCP14A0602-E/MS Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-MSOP Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821698 MIC4428YN Microchip Technology - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 20ns, 29ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821699 IR2153SPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - - 600V Not For New Designs
1821700 UCD7138DRST Texas Instruments - Tape & Reel (TR) 4.5 V ~ 18 V Inverting 4ns, 3.5ns -40°C ~ 125°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-SON (3x3) Low-Side Single 1 N-Channel MOSFET 1.08V, 1.93V 4A, 6A - Active
1821703 UCC27536DBVT Texas Instruments - Tape & Reel (TR) 10 V ~ 32 V Inverting 15ns, 10ns -40°C ~ 140°C (TJ) Surface Mount SC-74A, SOT-753 SOT-23-5 High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 1.2V, 2.2V 2.5A, 2.5A - Active
1821706 MIC4608YM Microchip Technology - Tube 10 V ~ 20 V Non-Inverting 31ns, 31ns -40°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.2V 1A, 1A 600V Active
1821707 MAX17604ATA+T Maxim Integrated - Cut Tape (CT) 4 V ~ 14 V Non-Inverting 40ns, 25ns -40°C ~ 150°C (TJ) Surface Mount 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Low-Side Independent 2 N-Channel MOSFET 2V, 4.25V 4A, 4A - Active
1821708 MIC4421ZM Microchip Technology - Tube 4.5 V ~ 18 V Inverting 20ns, 24ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.4V 9A, 9A - Active
1821709 IRS2111SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 290mA, 600mA 600V Active
1821710 MIC4422ZM Microchip Technology - Tube 4.5 V ~ 18 V Non-Inverting 20ns, 24ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.4V 9A, 9A - Active
1821711 UCC27324P Texas Instruments - Tube 4.5 V ~ 15 V Non-Inverting 20ns, 15ns -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 1V, 2V 4A, 4A - Active
1821712 L6386AD STMicroelectronics - Tube 17V (Max) Inverting 50ns, 30ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SO Half-Bridge Independent 2 IGBT, N-Channel MOSFET 1.5V, 3.6V 400mA, 650mA 600V Active
1821713 L6392D STMicroelectronics - Tube 12.5 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SO Half-Bridge Independent 2 IGBT, N-Channel MOSFET 1.1V, 1.9V 290mA, 430mA 600V Active
1821714 UCC27523D Texas Instruments - Tube 4.5 V ~ 18 V Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel MOSFET 1V, 2.3V 5A, 5A - Active
1821715 UCC27525D Texas Instruments - Tube 4.5 V ~ 18 V Inverting, Non-Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Independent 2 IGBT, N-Channel MOSFET 1V, 2.3V 5A, 5A - Active
1821716 UCC27524ADGN Texas Instruments - Tube 4.5 V ~ 18 V Non-Inverting 7ns, 6ns -40°C ~ 140°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad 8-MSOP-PowerPad Low-Side Independent 2 IGBT, N-Channel MOSFET 1V, 2.3V 5A, 5A - Active
1821717 IRS2112SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821718 TC4423CPA Microchip Technology - Tube 4.5 V ~ 18 V Inverting 23ns, 25ns 0°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A - Active
1821719 IRS24531DSPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 120ns, 50ns -25°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Synchronous 4 N-Channel MOSFET 4.7V, 9.3V 180mA, 260mA 600V Active
1821720 L6393D STMicroelectronics - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SO Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 1.1V, 1.9V 290mA, 430mA 600V Active
1821721 LM9061M/NOPB Texas Instruments - Tube 7 V ~ 26 V Non-Inverting - -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 N-Channel MOSFET 1.5V, 3.5V - - Active
1821722 IRS21084SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821723 IRS2118PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821724 TC4431COA Microchip Technology - Tube 4.5 V ~ 30 V Inverting 25ns, 33ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side or Low-Side Single 1 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821725 TPIC46L01DB Texas Instruments - Tube 4.5 V ~ 5.5 V Non-Inverting 3.5µs, 3µs -40°C ~ 150°C (TJ) Surface Mount 28-SSOP (0.209", 5.30mm Width) 28-SSOP Low-Side Independent 6 N-Channel MOSFET - 1.2mA, 1.2mA - Active
1821726 IRS21064SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821727 IR21271PBF Infineon Technologies - Tube 9 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821728 IR21091PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821729 IR21094PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821730 IRS2110PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 500V Active
1821731 IR21064PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821732 IR2108PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821733 TPS2811P Texas Instruments - Tube 4 V ~ 14 V Inverting 14ns, 15ns -40°C ~ 125°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Synchronous 2 N-Channel, P-Channel MOSFET 1V, 4V 2A, 2A - Active
1821734 IRS21094PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821735 IRS2117PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821736 IR21365SPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1821737 MAX8811EEE+ Maxim Integrated - Tube 4.5 V ~ 7 V Non-Inverting 14ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 16-SSOP (0.154", 3.90mm Width) 16-QSOP Half-Bridge Synchronous 4 N-Channel MOSFET 0.8V, 2.6V 6A, 6A 30V Active
1821738 UC2710N Texas Instruments - Tube 4.7 V ~ 18 V Inverting, Non-Inverting 85ns, 85ns -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2V 6A, 6A - Active
1821739 MAX620CWN+ Maxim Integrated - Tube 4.5 V ~ 16.5 V Non-Inverting 1.7µs, 2.5µs 0°C ~ 70°C (TA) Surface Mount 18-SOIC (0.295", 7.50mm Width) 18-SOIC High-Side Independent 4 N-Channel MOSFET 0.8V, 2.4V - - Obsolete
1821740 IR2233PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-DIP Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Active
1821741 MAX4428MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting, Non-Inverting 20ns, 20ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821742 MAX4427MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Non-Inverting 20ns, 20ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 1.5A, 1.5A - Active
1821743 TSC426MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting 25ns, 25ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 1.5A, 1.5A - Active
1821744 TSC428MJA/883B Maxim Integrated Military, MIL-STD-883 Tube 4.5 V ~ 18 V Inverting, Non-Inverting 25ns, 25ns -55°C ~ 125°C (TA) Through Hole 8-CDIP (0.300", 7.62mm) 8-CERDIP Low-Side Independent 2 N-Channel, P-Channel MOSFET 0.8V, 2V 1.5A, 1.5A - Active
1821745 VLA553-02R Powerex Inc. - Bulk 14.2 V ~ 15.8 V Non-Inverting - -25°C ~ 70°C (TA) Chassis Mount Module Module Half-Bridge Independent 2 IGBT - 24A, 24A - Active
1821746 VLA553-01R Powerex Inc. - Bulk 14.2 V ~ 15.8 V Non-Inverting - -25°C ~ 70°C (TA) Chassis Mount Module OctaPAK 7+1 Half-Bridge Independent 2 IGBT - 24A, 24A - Active
1821747 NCP81151BMNTBG ON Semiconductor - Tape & Reel (TR) 4.5 V ~ 5.5 V Non-Inverting 16ns, 11ns -40°C ~ 150°C (TJ) Surface Mount 8-VFDFN Exposed Pad 8-DFN (2x2) Half-Bridge Synchronous 2 N-Channel MOSFET 0.6V, 3.3V - 40V Active
1821750 NCP5901DR2G ON Semiconductor - Tape & Reel (TR) 4.5 V ~ 13.2 V Non-Inverting 16ns, 11ns 0°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET 0.7V, 3.4V - 35V Discontinued
1821753 MIC4604YM-TR Microchip Technology - Cut Tape (CT) 5.25 V ~ 16 V Non-Inverting 20ns, 20ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.2V 1.5A, 1A - Active
1821755 FL3100TSX FairchildSemiconductor - Tape & Reel (TR) 4.5 V ~ 18 V Non-Inverting 13ns, 9ns -55°C ~ 150°C (TJ) Surface Mount SC-74A, SOT-753 SOT-23-5 Low-Side Single 1 N-Channel MOSFET 0.8V, 2V 3A, 3.2A - Discontinued

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