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Components
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Полупроводники / Диоды, транзисторы, тиристоры / Транзисторы / Биполярные транзисторы / Одиночный биполярный транзистор с изолированным затвором IGBTs
Compare
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Manufacturer Part Number |
Manufacturer |
Series |
Packaging |
Voltage Collector Emitter Breakdown Max |
Current Collector Ic Max |
Power Max |
Input Type |
Test Condition |
Operating Temperature |
Mounting Type |
Package Case |
Supplier Device Package |
IGBT Type |
Current Collector Pulsed Icm |
Vceon Max Vge Ic |
Switching Energy |
Gate Charge |
Td onoff 25C |
Reverse Recovery Time trr |
Lifecycle |
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Lifecycle |
1057001 |
GT10G131(TE12L,Q) |
Toshiba Semiconductor andStorage |
- |
Tape & Reel (TR) |
400V |
- |
1W |
Standard |
- |
150°C (TJ) |
Surface Mount |
8-SOIC (0.173", 4.40mm Width) |
8-SOP (5.5x6.0) |
- |
200A |
2.3V @ 4V, 200A |
- |
- |
3.1µs/2µs |
- |
Obsolete |
1057002 |
GT10J312(Q) |
Toshiba Semiconductor andStorage |
- |
Tube |
600V |
10A |
60W |
Standard |
300V, 10A, 100 Ohm, 15V |
150°C (TJ) |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
TO-220SM |
- |
20A |
2.7V @ 15V, 10A |
- |
- |
400ns/400ns |
200ns |
Obsolete |
1057003 |
GT60N321(Q) |
Toshiba Semiconductor andStorage |
- |
Tube |
1000V |
60A |
170W |
Standard |
- |
150°C (TJ) |
Through Hole |
TO-3PL |
TO-3P(LH) |
- |
120A |
2.8V @ 15V, 60A |
- |
- |
330ns/700ns |
2.5µs |
Obsolete |
1057004 |
GT8G133(TE12L,Q) |
Toshiba Semiconductor andStorage |
- |
Tape & Reel (TR) |
400V |
- |
600mW |
Standard |
- |
150°C (TJ) |
Surface Mount |
8-TSSOP (0.173", 4.40mm Width) |
8-TSSOP |
- |
150A |
2.9V @ 4V, 150A |
- |
- |
1.7µs/2µs |
- |
Obsolete |
1057005 |
GT50J121(Q) |
Toshiba Semiconductor andStorage |
- |
Tube |
600V |
50A |
240W |
Standard |
300V, 50A, 13 Ohm, 15V |
150°C (TJ) |
Through Hole |
TO-3PL |
TO-3P(LH) |
- |
100A |
2.45V @ 15V, 50A |
1.3mJ (on), 1.34mJ (off) |
- |
90ns/300ns |
- |
Obsolete |