| Артикул | Производитель | Серия | Упаковка | Тип | Технология | Номинальный ток стока при 25 С | Диапазон рабочих температур | Способ монтажа | Типоразмер корпуса в каталоге поставщика | Типоразмер | Мощность не более | Напряжение СИ | Drive_Voltage_Max_Rds_On__Min_Rds_On | Порогое напряжение ЗИ не более при токе стока | Gate_Charge_Qg_Max__Vgs | Input_Capacitance_Ciss_Max__Vds | Vgs_Max | Особенности | Рассеиваемая мощность не более | Сопротивление канала не более при токе стока и напряжении ЗИ | Входная емкость при напряжении ЗИ | Жизненный цикл | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Жизненный цикл | |||||||||||||||||||||||
| 1176290 | GA03JT12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 3A (Tc) (95°C) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | - | 3.3V | - | 15W (Tc) | 460 mOhm @ 3A | Active | ||
| 1176334 | GA08JT17-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 8A (Tc) (90°C) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1700V (1.7kV) | - | - | - | - | 3V | - | 48W (Tc) | 250 mOhm @ 8A | Active | ||
| 1178110 | GA05JT01-46 | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 9A (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 | 100V | - | - | - | - | 3.45V | - | 20W (Tc) | 240 mOhm @ 5A | Active | ||
| 1178111 | GA05JT03-46 | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 9A (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 | 300V | - | - | - | - | 3.45V | - | 20W (Tc) | 240 mOhm @ 5A | Active | ||
| 1179696 | GA20SICP12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 45A (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | 3091pF @ 800V | - | - | 282W (Tc) | 50 mOhm @ 20A | Active | ||
| 1179756 | GA16JT17-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 16A (Tc) (90°C) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1700V (1.7kV) | - | - | - | - | - | - | 282W (Tc) | 110 mOhm @ 16A | Active | ||
| 1179757 | GA50JT12-263 | GeneSiC Semiconductor | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | ||
| 1179787 | 2N7636-GA | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 4A (Tc) (165°C) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA | 650V | - | - | - | 324pF @ 35V | - | - | 125W (Tc) | 415 mOhm @ 4A | Active | ||
| 1179789 | 2N7635-GA | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 4A (Tc) (165°C) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 | 650V | - | - | - | 324pF @ 35V | - | - | 47W (Tc) | 415 mOhm @ 4A | Active | ||
| 1179790 | 2N7638-GA | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 8A (Tc) (158°C) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA | 650V | - | - | - | 720pF @ 35V | - | - | 200W (Tc) | 170 mOhm @ 8A | Active | ||
| 1179792 | 2N7637-GA | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 7A (Tc) (165°C) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 | 650V | - | - | - | 720pF @ 35V | - | - | 80W (Tc) | 170 mOhm @ 7A | Active | ||
| 1179795 | 2N7640-GA | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 16A (Tc) (155°C) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA | 650V | - | - | - | 1534pF @ 35V | - | - | 330W (Tc) | 105 mOhm @ 16A | Active | ||
| 1179798 | 2N7639-GA | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 15A (Tc) (155°C) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 | 650V | - | - | - | 1534pF @ 35V | - | - | 172W (Tc) | 105 mOhm @ 15A | Active | ||
| 1179804 | GA50JT06-258 | GeneSiC Semiconductor | - | Bulk | - | SiC (Silicon Carbide Junction Transistor) | 100A (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-258 | TO-258-3, TO-258AA | 600V | - | - | - | - | - | - | 769W (Tc) | 25 mOhm @ 50A | Active | ||
| 1184915 | GA05JT12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 5A (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | - | - | - | 106W (Tc) | 280 mOhm @ 5A | Active | ||
| 1185135 | GA06JT12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 6A (Tc) (90°C) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | - | - | - | - | 220 mOhm @ 6A | Active | ||
| 1190067 | GA20JT12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 20A (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | - | - | - | 282W (Tc) | 70 mOhm @ 20A | Active | ||
| 1191208 | GA05JT12-263 | GeneSiC Semiconductor | - | - | - | SiC (Silicon Carbide Junction Transistor) | 15A (Tc) | 175°C (TJ) | - | - | - | 1200V (1.2kV) | - | - | - | - | 3.45V | - | 106W (Tc) | - | Active | ||
| 1191224 | GA10JT12-263 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 25A (Tc) | 175°C (TJ) | Surface Mount | - | - | 1200V (1.2kV) | - | - | - | 1403pF @ 800V | 3.5V | - | 170W (Tc) | 120 mOhm @ 10A | Active | ||
| 1191226 | GA10SICP12-263 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 25A (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 1200V (1.2kV) | - | - | - | 1403pF @ 800V | 3.5V | - | 170W (Tc) | 100 mOhm @ 10A | Active | ||
| 1191227 | GA100JT12-227 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 160A | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 1200V (1.2kV) | - | - | - | 14400pF @ 800V | 3.42V | - | 535W (Tc) | 10 mOhm @ 100A | Active | ||
| 1193019 | GA50JT12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 100A (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | 7209pF @ 800V | 3.42V | - | 583W (Tc) | 25 mOhm @ 50A | Active | ||
| 1203547 | GA20JT12-263 | GeneSiC Semiconductor | - | - | - | SiC (Silicon Carbide Junction Transistor) | 45A (Tc) | 175°C (TJ) | - | - | - | 1200V (1.2kV) | - | - | - | 3091pF @ 800V | 3.44V | - | 282W (Tc) | 60 mOhm @ 20A | Active | ||
| 1209611 | GA50JT17-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 100A (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 | 1700V (1.7kV) | - | - | - | - | 3.42V | - | 583W (Tc) | 25 mOhm @ 50A | Active | ||
| 1211926 | GA100JT17-227 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 160A | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 1700V (1.7kV) | - | - | - | 14400pF @ 800V | 3.42V | - | 535W (Tc) | 10 mOhm @ 100A | Active | ||
| 1212085 | GA10JT12-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 10A (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1200V (1.2kV) | - | - | - | - | 3.5V | - | 170W (Tc) | 140 mOhm @ 10A | Active | ||
| 1212099 | GA04JT17-247 | GeneSiC Semiconductor | - | Tube | - | SiC (Silicon Carbide Junction Transistor) | 4A (Tc) (95°C) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1700V (1.7kV) | - | - | - | - | 3.45V | - | 106W (Tc) | 480 mOhm @ 4A | Active |
