Components

	Manufacturer Part Number	Manufacturer	Series	Packaging	FET Type	Technology	Current Continuous Drain Id 25C	Operating Temperature	Mounting Type	Supplier Device Package	Package Case	Drain to Source Voltage Vdss	Drive Voltage Max Rds On Min Rds On	Vgsth Max Id	Gate Charge Qg Max Vgs	Input Capacitance Ciss Max Vds	Vgs Max	FET Feature	Power Dissipation Max	Rds On Max Id Vgs	Lifecycle
																					Lifecycle
1176290	GA03JT12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	3A (Tc) (95°C)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	-	3.3V	-	15W (Tc)	460 mOhm @ 3A	Active
1176334	GA08JT17-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	8A (Tc) (90°C)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1700V (1.7kV)	-	-	-	-	3V	-	48W (Tc)	250 mOhm @ 8A	Active
1178110	GA05JT01-46	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	9A (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-46	TO-46-3	100V	-	-	-	-	3.45V	-	20W (Tc)	240 mOhm @ 5A	Active
1178111	GA05JT03-46	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	9A (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-46	TO-46-3	300V	-	-	-	-	3.45V	-	20W (Tc)	240 mOhm @ 5A	Active
1179696	GA20SICP12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	45A (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	3091pF @ 800V	-	-	282W (Tc)	50 mOhm @ 20A	Active
1179756	GA16JT17-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	16A (Tc) (90°C)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1700V (1.7kV)	-	-	-	-	-	-	282W (Tc)	110 mOhm @ 16A	Active
1179757	GA50JT12-263	GeneSiC Semiconductor	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active
1179787	2N7636-GA	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	4A (Tc) (165°C)	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA	650V	-	-	-	324pF @ 35V	-	-	125W (Tc)	415 mOhm @ 4A	Active
1179789	2N7635-GA	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	4A (Tc) (165°C)	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3	650V	-	-	-	324pF @ 35V	-	-	47W (Tc)	415 mOhm @ 4A	Active
1179790	2N7638-GA	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	8A (Tc) (158°C)	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA	650V	-	-	-	720pF @ 35V	-	-	200W (Tc)	170 mOhm @ 8A	Active
1179792	2N7637-GA	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	7A (Tc) (165°C)	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3	650V	-	-	-	720pF @ 35V	-	-	80W (Tc)	170 mOhm @ 7A	Active
1179795	2N7640-GA	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	16A (Tc) (155°C)	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA	650V	-	-	-	1534pF @ 35V	-	-	330W (Tc)	105 mOhm @ 16A	Active
1179798	2N7639-GA	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	15A (Tc) (155°C)	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3	650V	-	-	-	1534pF @ 35V	-	-	172W (Tc)	105 mOhm @ 15A	Active
1179804	GA50JT06-258	GeneSiC Semiconductor	-	Bulk	-	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-258	TO-258-3, TO-258AA	600V	-	-	-	-	-	-	769W (Tc)	25 mOhm @ 50A	Active
1184915	GA05JT12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	5A (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	-	-	-	106W (Tc)	280 mOhm @ 5A	Active
1185135	GA06JT12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	6A (Tc) (90°C)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	-	-	-	-	220 mOhm @ 6A	Active
1190067	GA20JT12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	20A (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	-	-	-	282W (Tc)	70 mOhm @ 20A	Active
1191208	GA05JT12-263	GeneSiC Semiconductor	-	-	-	SiC (Silicon Carbide Junction Transistor)	15A (Tc)	175°C (TJ)	-	-	-	1200V (1.2kV)	-	-	-	-	3.45V	-	106W (Tc)	-	Active
1191224	GA10JT12-263	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	25A (Tc)	175°C (TJ)	Surface Mount	-	-	1200V (1.2kV)	-	-	-	1403pF @ 800V	3.5V	-	170W (Tc)	120 mOhm @ 10A	Active
1191226	GA10SICP12-263	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	25A (Tc)	175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	1200V (1.2kV)	-	-	-	1403pF @ 800V	3.5V	-	170W (Tc)	100 mOhm @ 10A	Active
1191227	GA100JT12-227	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	160A	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC	1200V (1.2kV)	-	-	-	14400pF @ 800V	3.42V	-	535W (Tc)	10 mOhm @ 100A	Active
1193019	GA50JT12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	7209pF @ 800V	3.42V	-	583W (Tc)	25 mOhm @ 50A	Active
1203547	GA20JT12-263	GeneSiC Semiconductor	-	-	-	SiC (Silicon Carbide Junction Transistor)	45A (Tc)	175°C (TJ)	-	-	-	1200V (1.2kV)	-	-	-	3091pF @ 800V	3.44V	-	282W (Tc)	60 mOhm @ 20A	Active
1209611	GA50JT17-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	175°C (TJ)	Through Hole	TO-247	TO-247-3	1700V (1.7kV)	-	-	-	-	3.42V	-	583W (Tc)	25 mOhm @ 50A	Active
1211926	GA100JT17-227	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	160A	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC	1700V (1.7kV)	-	-	-	14400pF @ 800V	3.42V	-	535W (Tc)	10 mOhm @ 100A	Active
1212085	GA10JT12-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	10A (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1200V (1.2kV)	-	-	-	-	3.5V	-	170W (Tc)	140 mOhm @ 10A	Active
1212099	GA04JT17-247	GeneSiC Semiconductor	-	Tube	-	SiC (Silicon Carbide Junction Transistor)	4A (Tc) (95°C)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3	1700V (1.7kV)	-	-	-	-	3.45V	-	106W (Tc)	480 mOhm @ 4A	Active

Sort as numbers

Parameter

Сравнение

Select

Password recovery