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Артикул Производитель Серия Упаковка Напряжение питания Тип входного сигнала Типовое время нарастания спада Диапазон рабочих температур Способ монтажа Типоразмер Типоразмер корпуса в каталоге поставщика Driven_Configuration Направление канала Number_of_Drivers Gate_Type Logic_Voltage___VIL_VIH Current___Peak_Output_Source_Sink Напряжение верхнего плеча Жизненный цикл
Жизненный цикл
1821645 IRS2101PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821647 IR2106PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821648 IRS2106PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821650 IRS2109SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821653 IR2127SPBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821655 IR2117SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1821656 IR2118PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1821657 IR2111SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 250mA, 500mA 600V Active
1821658 IRS2011PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 25ns, 15ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 N-Channel MOSFET 0.8V, 2.7V 1A, 1A 200V Active
1821659 IR2108SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821661 IR25607SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 600V Active
1821663 IR21094SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821664 IR21064SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821665 IR2127PBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821666 IRS21844PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 1.9A, 2.3A 600V Active
1821668 IR2301PBF Infineon Technologies - Tube 5 V ~ 20 V Non-Inverting 130ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821669 IRS21864PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 22ns, 18ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 4A, 4A 600V Active
1821673 IRS21834PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 1.9A, 2.3A 600V Active
1821677 IR21363JPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1821679 IRS2336DJPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.5V 200mA, 350mA 600V Active
1821680 IR2133JPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Active
1821686 IR2233SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Active
1821699 IR2153SPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - - 600V Not For New Designs
1821709 IRS2111SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 290mA, 600mA 600V Active
1821717 IRS2112SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821719 IRS24531DSPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 120ns, 50ns -25°C ~ 125°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Synchronous 4 N-Channel MOSFET 4.7V, 9.3V 180mA, 260mA 600V Active
1821722 IRS21084SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821723 IRS2118PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821726 IRS21064SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821727 IR21271PBF Infineon Technologies - Tube 9 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1821728 IR21091PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821729 IR21094PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821730 IRS2110PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 500V Active
1821731 IR21064PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821732 IR2108PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1821734 IRS21094PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821735 IRS2117PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V Active
1821736 IR21365SPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1821740 IR2233PBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-DIP Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Active
1821777 1EDI05I12AHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 35 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 1.3A, 900mA 1200V Active
1821796 1EDI20H12AHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 35 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 4A, 3.5A 1200V Active
1821799 1EDI20I12AHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 35 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 4A, 3.5A 1200V Active
1821818 1EDI10I12MHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 18 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 1.9A, 1.7A 1200V Active
1821827 IRS2003SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 70ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 200V Active
1821828 IRS2004SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 70ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 200V Active
1821829 IRS21531DSPBF Infineon Technologies - Tube 10 V ~ 15.4 V RC Input Circuit 120ns, 50ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - 180mA, 260mA 600V Active
1821910 IRS2127SPBF Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1821938 IRS4427PBF Infineon Technologies - Tube 6 V ~ 20 V Non-Inverting 25ns, 25ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP Low-Side Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 2.3A, 3.3A - Active
1821994 IR2109SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1822048 IRS25752LTRPBF Infineon Technologies µHVIC™ Tape & Reel (TR) 10 V ~ 18 V Non-Inverting 85ns, 40ns -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-23-6 High-Side Single 1 N-Channel MOSFET - 160mA, 240mA 600V Active
1822051 2EDL05N06PFXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 48ns, 24ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-DSO Half-Bridge Independent 2 IGBT, N-Channel, P-Channel MOSFET 1.1V, 1.7V - 600V Active
1822054 IRS2001PBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 200V Not For New Designs
1822055 IRS2153DSTRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 15.4 V RC Input Circuit 120ns, 50ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - 180mA, 260mA 600V Active
1822058 1EDI20N12AFXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 10 V ~ 35 V Inverting, Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) PG-DSO-8-51 High-Side or Low-Side Single 1 N-Channel MOSFET 1.5V, 3.5V 4A, 3.5A 1200V Active
1822064 2EDL23N06PJXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 10 V ~ 17.5 V Non-Inverting 48ns, 37ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-DSO Half-Bridge Independent 2 N-Channel, P-Channel MOSFET 1.1V, 1.7V 1.8A, 2.3A 600V Active
1822070 IRS21091STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Active
1822073 IR2112STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1822076 IRS21171SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V Obsolete
1822077 IR2117STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Active
1822080 IR1167BSTRPBF Infineon Technologies SmartRectifier™ Tape & Reel (TR) 12 V ~ 18 V Non-Inverting 18ns, 10ns -25°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Low-Side Single 1 N-Channel MOSFET 2V, 2.15V 2A, 7A - Active
1822083 IR2108STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1822089 IRS2113STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2.5A, 2.5A 600V Active
1822092 1EDI40I12AHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 35 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 7.5A, 6.8A 1200V Active
1822095 IRS2330DJTRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Inverting 80ns, 35ns -40°C ~ 150°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Obsolete
1822125 IR2302SPBF Infineon Technologies - Tube 5 V ~ 20 V Non-Inverting 130ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Active
1822129 IR25602STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V Active
1822138 IR2136STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1822142 IR2184SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 1.9A, 2.3A 600V Active
1822143 IR2136SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1822144 IR2113SPBF Infineon Technologies - Tube 3.3 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V Active
1822256 IR21844STRPBF Infineon Technologies - Tape & Reel (TR) 10 V ~ 20 V Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 1.9A, 2.3A 600V Active
1822600 IR21834SPBF Infineon Technologies - Tube 10 V ~ 20 V Inverting, Non-Inverting 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 1.9A, 2.3A 600V Active
1822646 1EDI30I12MHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 18 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 5.2A, 4.5A 1200V Active
1822649 IR2085STRPBF Infineon Technologies Automotive, AEC-Q100 Tape & Reel (TR) 10 V ~ 15 V RC Input Circuit 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Independent 2 N-Channel MOSFET - 1A, 1A 100V Active
1822760 1EDI60H12AHXUMA1 Infineon Technologies EiceDriver™ Tape & Reel (TR) 13 V ~ 35 V Non-Inverting 10ns, 9ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.295", 7.50mm Width) 8-DSO High-Side or Low-Side Single 1 IGBT 1.5V, 3.5V 10A, 9.4A 1200V Active
1822836 IR21531SPBF Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 N-Channel MOSFET - - 600V Active
1822905 IRS21864SPBF Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount 14-SOIC (0.154", 3.90mm Width) 14-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 4A, 4A 600V Active
1822931 IR2128SPBF Infineon Technologies - Tube 12 V ~ 20 V Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Active
1823039 IR2125SPBF Infineon Technologies - Tube 0 V ~ 18 V Non-Inverting 43ns, 26ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC High-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.2V 1.6A, 3.3A 500V Active
1823044 IR21363STRPBF Infineon Technologies - Tape & Reel (TR) 12 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 28-SOIC (0.295", 7.50mm Width) 28-SOIC Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Active
1823531 IR2104S Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V Obsolete
1823532 IR2151 Infineon Technologies - Tube 10 V ~ 20 V RC Input Circuit 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET - 125mA, 250mA 600V Obsolete
1823533 98-0247 Infineon Technologies - Tube 3.3 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V Obsolete
1823534 IR2133 Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-DIP Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Obsolete
1823535 IR2101 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V Obsolete
1823536 IR2104 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V Obsolete
1823537 IR2106 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Obsolete
1823538 IR2108 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V Obsolete
1823539 IR2110 Infineon Technologies - Tube 3.3 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V Obsolete
1823540 IR2111 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 8.3V, 12.6V 250mA, 500mA 600V Obsolete
1823541 IR2112 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Obsolete
1823542 IR2113 Infineon Technologies - Tube 3.3 V ~ 20 V Non-Inverting 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP Half-Bridge Independent 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V Obsolete
1823543 IR2117 Infineon Technologies - Tube 10 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V Obsolete
1823544 IR2125 Infineon Technologies - Tube 0 V ~ 18 V Non-Inverting 43ns, 26ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 2.2V 1.6A, 3.3A 500V Obsolete
1823545 IR2127 Infineon Technologies - Tube 12 V ~ 20 V Non-Inverting 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V Obsolete
1823546 IR2130 Infineon Technologies - Tube 10 V ~ 20 V Inverting 80ns, 35ns -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-DIP Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Obsolete
1823547 IR2133J Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V Obsolete
1823548 IR2136 Infineon Technologies - Tube 10 V ~ 20 V Inverting 125ns, 50ns -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-DIP Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V Obsolete
1823549 IR2153 Infineon Technologies - Tube 10 V ~ 15.6 V RC Input Circuit 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP Half-Bridge Synchronous 2 N-Channel MOSFET - - 600V Obsolete
1823550 IR2233J Infineon Technologies - Tube 10 V ~ 20 V Inverting 90ns, 40ns 125°C (TJ) Surface Mount 44-LCC (J-Lead), 32 Leads 44-PLCC, 32 Leads (16.58x16.58) Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 0.8V, 2V 250mA, 500mA 1200V Obsolete

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