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Components
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Полупроводники / Диоды, транзисторы, тиристоры / Транзисторы / Биполярные транзисторы / Одиночный биполярный транзистор с изолированным затвором IGBTs
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Manufacturer Part Number |
Manufacturer |
Series |
Packaging |
Voltage Collector Emitter Breakdown Max |
Current Collector Ic Max |
Power Max |
Input Type |
Test Condition |
Operating Temperature |
Mounting Type |
Package Case |
Supplier Device Package |
IGBT Type |
Current Collector Pulsed Icm |
Vceon Max Vge Ic |
Switching Energy |
Gate Charge |
Td onoff 25C |
Reverse Recovery Time trr |
Lifecycle |
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Lifecycle |
| 1057807 |
GA35XCP12-247 |
GeneSiC Semiconductor |
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Tube |
1200V |
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Standard |
800V, 35A, 22 Ohm, 15V |
-40°C ~ 150°C (TJ) |
Through Hole |
TO-247-3 |
TO-247AB |
PT |
35A |
3V @ 15V, 35A |
2.66mJ (on), 4.35mJ (off) |
50nC |
- |
36ns |
Active |
