Components

	Manufacturer Part Number	Manufacturer	Series	Packaging	FET Type	Technology	Current Continuous Drain Id 25C	Operating Temperature	Mounting Type	Supplier Device Package	Package Case	Drain to Source Voltage Vdss	Drive Voltage Max Rds On Min Rds On	Vgsth Max Id	Gate Charge Qg Max Vgs	Input Capacitance Ciss Max Vds	Vgs Max	FET Feature	Power Dissipation Max	Rds On Max Id Vgs	Lifecycle
																					Lifecycle
1178114	HTNFET-T	Honeywell Microelectronics & PrecisionSensors	HTMOS™	Bulk	N-Channel	MOSFET (Metal Oxide)	-	-55°C ~ 225°C (TJ)	Through Hole	4-Power Tab	4-SIP	55V	5V	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	10V	-	50W (Tj)	400 mOhm @ 100mA, 5V	Active
1179799	HTNFET-D	Honeywell Microelectronics & PrecisionSensors	HTMOS™	Tube	N-Channel	MOSFET (Metal Oxide)	-	-55°C ~ 225°C (TJ)	Through Hole	8-CDIP-EP	8-CDIP Exposed Pad	55V	-	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	-	-	50W (Tj)	400 mOhm @ 100mA, 5V	Active
1179800	HTNFET-DC	Honeywell Microelectronics & PrecisionSensors	HTMOS™	Tube	N-Channel	MOSFET (Metal Oxide)	-	-	Through Hole	-	8-CDIP Exposed Pad	55V	-	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	-	-	50W (Tj)	400 mOhm @ 100mA, 5V	Active
1179802	HTNFET-TC	Honeywell Microelectronics & PrecisionSensors	HTMOS™	-	N-Channel	MOSFET (Metal Oxide)	-	-	Through Hole	-	-	55V	-	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	-	-	50W (Tj)	400 mOhm @ 100mA, 5V	Active

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